JAN1N4617C-1

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Diodes - Zener - Single

The JAN1N4617C-1 is a single zener diode. It is classified as a high-rel diode manufactured from a series of Silicon-3 (Si3) doping elements, providing a high level of performance in a wide range of applications.

This diode provides reliable and rugged performance across a wide temperature range. It is designed with a patented technology, allowing the diode body to move away from the substrate, keeping distance between the two and allowing current to flow freely.

Applications

The JAN1N4617C-1 is a versatile device, with a wide range of applications in industrial, automotive and consumer electronics. It can be used in radio-frequency (RF) applications, offering superior performance in the transmission and reception of signals. It can also be used in voltage regulation applications, such as voltage stabilizers, lightning surge protection and power supplies.

Working Principle

The JAN1N4617C-1 is a unidirectional device that works on the principle of a zener diode. It is a two-terminal device that has a cathode and an anode. Doping elements within the device create a region of high density electron holes at the cathode junction.

When the voltage across the diode reaches the zener breakdown voltage, the electron holes become neutralized and the current begins to flow through the diode. The current flow is limited by the reverse breakdown voltage of the diode. This diode allows current to flow in both forward and reverse directions.

The JAN1N4617C-1 has a wide operating temperature range of -55°C to 175°C, making it suitable for a range of uses. The diode also has a low power dissipation with low temperature coefficient, making it ideal for high frequency switching applications.

The JAN1N4617C-1 is a reliable and rugged zener diode, with wide applications in a variety of industrial, automotive, and consumer electronics applications. Its high performance, even in extreme temperatures makes it ideal for a number of application settings.

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