JAN1N6315C

Series:	Military, MIL-PRF-19500/533
Part Status:	Active
Voltage - Zener (Nom) (Vz):	4.3V
Tolerance:	±2%
Power - Max:	500mW
Impedance (Max) (Zzt):	20 Ohms
Current - Reverse Leakage @ Vr:	2µA @ 1V
Voltage - Forward (Vf) (Max) @ If:	1.4V @ 1A
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	B, Axial
Supplier Device Package:	DO-35 (DO-204AH)

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Introduction
The JAN1N6315C is a single Zener diode, constructed utilizing a high- efficacy Zener doping technique that provides better reverse Zener resistance, improved electrical parameters and better environmental and mechanical characteristics than conventional Zener diodes. This part is specifically suited to high voltage and high current applications. It features a cathode connection of up to 135 V reverse DC) and a fast snap-off characteristic over a wide range of power levels. Additionally, the JAN1N6315C offers a low-inductance, thermally stable, standard numeric ( SON ) surface mount package.Applications
The JAN1N6315C can be found in a variety of applications, the most common being reverse polarity protection, transient rejection and ESD protection. Reverse polarity protection prevents incorrect wiring from causing catastrophic circuit failure, while transient rejection helps to suppress voltage spikes and ESD protection ensures sensitive components are not damaged during operation. Other possible applications include buck and boost converters, voltage clamping, power over-voltage protection and semiconductor device isolation.Working Principle of JAN1N6315C
The JAN1N6315C consists of a single Zener diode inside a package suitable for surface mounting. When a forward bias current is applied, the diode conducts electricity in the forward direction, allowing current to flow. However, when a reverse bias voltage is applied, the voltage across the diode exceeds the breakdown voltage of the diode, causing it to conduct electricity in the reverse direction. This reverse voltage across the diode is limited by the Zener breakdown voltage of the diode and is maintained constant over a wide range of currents. As current is drawn through the device, the applied reverse bias voltage may exceed the Zener voltage of the diode due to its negative temperature coefficient (NTC). To compensate for this, the diode has a dynamic Zener at its cathode, which increases the breakdown voltage of the device and thus maintains a constant voltage.In summary, the JAN1N6315C utilizes a single Zener diode with a dynamic Zener at the cathode, which allows it to maintain a forward bias with a reverse bias voltage across it and thus provides reverse polarity protection, transient rejection, and ESD protection. Additionally, its thermally stable, standard numeric surface mount package makes it suitable for high voltage, high current applications.

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