JAN1N4120DUR-1

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A JAN1N4120DUR-1 diode is a single PN junction diode that belongs to the family of Zener diodes. It is a three-terminal semiconductor device with a reverse breakdown voltage of 12 volts. The device is designed to safely pass reverse current through its terminals without damage, while providing the user with reliable and consistent regulated voltage.

Description

JAN1N4120DUR-1 diodes are packaged in a DO-35 glass case that measures 3.9 millimeters by 2.5 millimeters. The device is constructed with a silicon PN junction and features platinum silicide-diffused junctions for enhanced reliability. The anode is signified by a banded or dotted line, while the cathode is identified by a bevel shouldered line. The device is capable of withstanding a junction temperature of up to 175 degrees Celsius.

Application Fields

JAN1N4120DUR-1 diodes find applications in a host of voltage regulation and protection circuits. They are often utilized as voltage references, allowing for the stabilization of a DC voltage output in the presence of varying temperatures and line conditions. The device is also popular in surge protection modules and other over-voltage protection applications. Additionally, they are frequently incorporated in the design of DC-to-DC converters, battery chargers, logic level converters, and clamping devices.

Working Principle

JAN1N4120DUR-1 diodes employ the principle of reverse current breakdown to provide the user with reliable and stable regulation of their DC voltages. When the device is connected in the reverse direction, a change in bias causes an increase in the device’s junction voltage. This causes a disproportionate increase in the current, allowing the device to regulate the flow at a preset value. The device acts as a sort of voltage shield, allowing for the faithful transfer of the desired amount of electricity, while protecting the connected load from external interference. Additionally, the diode can be utilized in conjunction with AC-DC and DC-DC converters to protect the sensitive equipment from destructive EMI.

Advantages

The chief advantages of the JAN1N4120DUR-1 diode are its miniature footprint and its impressive temperature range of up to 175°C. These characteristics make it well-suited for use in space-constrained and high powered applications. Furthermore, the device is extensively used in the manufacture of specialized devices and instruments requiring strong over-voltage protection. The diode boasts an excellent reverse current leakage performance and can sustain a powerful surge current, making it an ideal choice for many voltage regulation and protection applications.

Drawbacks

Although JAN1N4120DUR-1 diodes are reliable and capable of withstanding significant temperature changes, they have some limitations. Their ability to provide stable and graduated regulation of DC voltages is dependent on the external components incorporated in the circuit. Additionally, it should be noted that the device tends to degrade due to hysteresis in forward-biased mode and many vendors provide deteriorated amount of reverse current for the same model over a given period of time.

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