Allicdata Part #: | 1086-2085-ND |
Manufacturer Part#: |
JAN1N5415US |
Price: | $ 7.34 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE GEN PURP 50V 3A AXIAL |
More Detail: | Diode Standard 50V 3A Through Hole |
DataSheet: | JAN1N5415US Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 6.60914 |
Series: | Military, MIL-PRF-19500/411 |
Packaging: | Bulk |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 50V |
Current - Average Rectified (Io): | 3A |
Voltage - Forward (Vf) (Max) @ If: | 1.5V @ 9A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 150ns |
Current - Reverse Leakage @ Vr: | 1µA @ 50V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Through Hole |
Package / Case: | B, Axial |
Operating Temperature - Junction: | -65°C ~ 175°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Introduction
The JAN1N5415US is a rectifier diode and it is made from PN junction diode, speciallized for dimming and isomerizing of the current flow. It is rated 200 mA and its voltage varies from 5 to 75 volts (5V and 75V having the same current capability). It is commonly used in rectification, signal processing and signal conditioning.
Application Field and Working Principle
The JAN1N5415US is most commonly used for protecting sensitive electronics from power surges. It is used in rectification circuits as it allows for isolation of the direct current (DC) current voltage. It is also a great choice for signal conditioning; it prevents signal attenuation and interferences. Additionally, the JAN1N5415US prevents the current from flowing in reverse directions by shielding the device from reverse current. It is also used in dimming and isomerizing of the current flow.
The JAN1N5415US has a PN junction diode as its core component which allows it to form a protective shell around the sensitive electronic components. It is connected in such a way that the cathode or anode must be oriented in the positive direction and in case the current was flowing in a negative direction, the diode will block the current. This helps in the protection of components from reverse current and power surges.
Apart from its primary uses, the rectifier diode is often used in communication lines for signal conditioning as well. It prevents signal attenuation and interference as well as provides power factor correction by improving the load flow. The rectifier diode also helps in maintaining constant voltage and current regardless of the changes in the input power conditions.
Advantages
The JAN1N5415US has several advantages over other rectifier diodes including high current capability, low voltage drop, small size and high operating temperature rating. Its low voltage drop allows for greater efficiency and it can sustain a high current capability of up to 200 mA. This makes it well suited for applications that require a high current. In addition, it is made from a PN junction diode, which means that it has a low reverse current leakage making it suitable for use in rectifier circuits.
This rectifier diode has a small size and can fit into a wide range of applications. Its heat resistant features make it well adapted to industrial and electronic applications where it must withstand extreme temperatures. Its high operating temperature rating also allows for its use in high-power applications.
Conclusion
The JAN1N5415US is a rectifier diode that is well suited for rectification, signal processing, signal conditioning and power factor correction. Its advantages include high current capability, low voltage drop, small size, and high operating temperature rating. Owing to these features, this rectifier diode is often used in communication lines and in power-sensitive devices. Overall, the JAN1N5415US is an excellent choice for rectifier circuits.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
JAN1N6104US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.71V B S... |
JAN1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JAN1N6109US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V B S... |
JAN1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JAN1N6113AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V B S... |
JAN1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JAN1N6116US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V B ... |
JAN1N6129A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 69.2V 125.1V AX... |
JAN1N6139A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.2V C AX... |
JAN1N6149A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V C A... |
JAN1N6158A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 35.8V 64.6V C A... |
JAN1N6163A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 56V 103.1V C AX... |
JAN1N6172A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136.8V 245.7V C... |
JAN1N6466 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6466US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V B S... |
JAN1N6467 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
JAN1N6467US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V B S... |
JAN1N6469 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V AXIAL |
JAN1N6469US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V GMELF |
JAN1N6474 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6164A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 62.2V 112.8V C ... |
JAN1N6165A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 69.2V 125.1V C ... |
JAN1N6166A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 76V 137.6V C AX... |
JAN1N6167A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 86.6V 151.3V C ... |
JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
JAN1N6173A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 152V 273V C AXI... |
JAN1N6142US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 7.6V 15.23V C S... |
JAN1N6143AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 15.6V C SQ... |
JAN1N6143US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 16.38V C S... |
JAN1N6144AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 16.9V C SQ... |
JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
JAN1N6145US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 19.11V C S... |
JAN1N6146AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 21V C SQ-... |
JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
JAN1N6147AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 22.3V C S... |
JAN1N6147US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 23.42V C ... |
JAN1N6148AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 13.7V 25.1V C S... |
Diodes - General Purpose, Power, Switchi...
DIODE SCHOTTKY 40V 500MA SC76Diode Schot...
DIODE GEN PURPOSE DO-204ALDiode
DIODE GEN PURP 400V 1A DO41Diode Standar...
DIODE SCHOTTKY 20V 1A DIE 1=400Diode Sch...
DIODE GEN PURP 400V 500MA D5ADiode Stand...