JAN1N6122 Circuit Protection |
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Allicdata Part #: | 1086-19479-ND |
Manufacturer Part#: |
JAN1N6122 |
Price: | $ 10.98 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 35.8V 67.83V AXIAL |
More Detail: | N/A |
DataSheet: | JAN1N6122 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 9.97633 |
Voltage - Clamping (Max) @ Ipp: | 67.83V |
Supplier Device Package: | Axial |
Package / Case: | B, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 7.32A |
Series: | Military, MIL-PRF-19500/516 |
Voltage - Breakdown (Min): | 42.47V |
Voltage - Reverse Standoff (Typ): | 35.8V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS - Diodes: JAN1N6122 Application Field and Working Principle
Transient voltage suppression (TVS) diodes are devices specifically designed to protect electronic circuits from electrical overstress damage caused by voltage transients that exceed the normal operating voltage range of the system. The JAN1N6122 is a tri-bi diode designed to provide protection from ESD, EFT, and lightning transient events.
Applications of JAN1N6122
The JAN1N6122 is a high-voltage, high-power rectifier diode with an operating junction temperature range of -65°C to +175°C. It can be used in a variety of applications, including power conditioning and current limiting, computer and telecom protection, Industrial Automation Equipment, Automobiles, and Energy Storage Systems. The diode also provides protection against high-voltage transients in communications, sensing, control, and protection circuits.
Working Principle of JAN1N6122
TVS diodes are commonly used in reverse bias to protect against electrostatic discharge (ESD), electrical fast transients (EFT), and lightning transients. The JAN1N6122 utilizes a unique tri-bi configuration that makes it different from other varieties of TVS diodes. This allows it to handle large transients up to 26 kA without failure. It also has an exceptionally low leakage current for sustained power applications and provides excellent clamping characteristics for ESD and EFT transients.
When a transient event occurs, the JAN1N6122 quickly responds and the internal diodes break forward, forming a low-impedance path from the transients source to ground. This limits the amount of energy that is delivered to the protected circuit, preventing it from becoming damaged. The device also features a soft recovery characteristic, providing increased system reliability while reducing the stress on other circuit components.
Advantages of JAN1N6122
The JAN1N6122 provides superior protection from high-voltage transients in a small footprint. It offers excellent clamping performance, ultra-low leakage current, and a rapid response time. The device also has an ESD rating up to 28 kV, making it one of the most robust TVS devices available. Furthermore, the device is RoHS compliant and does not require any external components for protection.
In addition to its robust protecting capabilities, the device also features a reduced power dissipation for increased efficiency. The JAN1N6122 is also designed to ensure a reliable connection when used in conjunction with board-to-board shields, eliminating the need for additional hardware.
Conclusion
In conclusion, the JAN1N6122 is a high-voltage, high-power diode designed to provide protection from ESD, EFT, and lightning transients. The device features a tri-bi configuration that allows it to handle large transients up to 26 kA without failure. It also provides superior protection from high-voltage transients, excellent clamping performance, ultra-low leakage current, and a rapid response time. Furthermore, the device features a reduced power dissipation and is RoHS compliant, making it a highly reliable and cost-effective choice for protection applications.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6122A | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 35.8V 64.6V AXI... |
JAN1N6123A | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 38.8V 70.1V AXI... |
JAN1N6124A | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 42.6V 77V AXIAL |
JAN1N6119 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 27.4V 52.4V AXI... |
JAN1N6120 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 29.7V 56.28V AX... |
JAN1N6121 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 32.7V 62.06V AX... |
JAN1N6122 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 35.8V 67.83V AX... |
JAN1N6123 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 38.8V 73.61V AX... |
JAN1N6124 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 42.6V 80.85V AX... |
JAN1N6126 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 51.7V 101.96V A... |
JAN1N6127 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 56V 108.26V AXI... |
JAN1N6128 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 62.2V 118.44V A... |
JAN1N6129 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 69.2V 131.36V A... |
JAN1N6130 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 76V 144.48V AXI... |
JAN1N6131 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 86.6V 158.87V A... |
JAN1N6132 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 91.2V 173.36V A... |
JAN1N6133 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 98.8V 187.74V A... |
JAN1N6134 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 114V 216.62V AX... |
JAN1N6135 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 121.6V 229.32V ... |
JAN1N6136 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 136.8V 257.99V ... |
JAN1N6137 | Microsemi Co... | 10.98 $ | 1000 | TVS DIODE 152V 286.65V AX... |
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JAN1N6104 | Microsemi Co... | 11.0 $ | 1000 | TVS DIODE 6.2V 12.71V AXI... |
JAN1N6104A | Microsemi Co... | 11.0 $ | 1000 | TVS DIODE 6.2V 12.1V AXIA... |
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JAN1N6106 | Microsemi Co... | 11.0 $ | 1000 | TVS DIODE 7.6V 15.23V AXI... |
JAN1N6106A | Microsemi Co... | 11.0 $ | 1000 | TVS DIODE 7.6V 14.5V AXIA... |
JAN1N6107 | Microsemi Co... | 11.0 $ | 1000 | TVS DIODE 8.4V 16.38V AXI... |
JAN1N6107A | Microsemi Co... | 11.0 $ | 1000 | TVS DIODE 8.4V 15.6V AXIA... |
JAN1N6108 | Microsemi Co... | 11.0 $ | 1000 | TVS DIODE 9.1V 17.75V AXI... |
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