JAN1N6128 Circuit Protection |
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Allicdata Part #: | 1086-19510-ND |
Manufacturer Part#: |
JAN1N6128 |
Price: | $ 10.98 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 62.2V 118.44V AXIAL |
More Detail: | N/A |
DataSheet: | JAN1N6128 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 9.97633 |
Voltage - Clamping (Max) @ Ipp: | 118.44V |
Supplier Device Package: | Axial |
Package / Case: | B, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 4.18A |
Series: | Military, MIL-PRF-19500/516 |
Voltage - Breakdown (Min): | 74V |
Voltage - Reverse Standoff (Typ): | 62.2V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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Transient voltage suppressor (TVS) diodes are components that are designed to limit or suppress voltage transients (also known as voltage spikes). They come in a variety of shapes and sizes in order to suit different applications. The JAN1N6128 is a surface mount transient voltage suppressor diode designed to protect against overvoltage and electrostatic discharge.
The JAN1N6128 is a unidirectional TVS diode that is ideal for mobile and other portable electronic applications. The diode is rated at 400W (PM(AV) per IEC 61000-4-2 (ESD) 8 kV (air), 8kV (contact) performance. It has a low breakdown voltage of 2.6 V and a non-repetitive peak pulse power rating of 580 W. In addition, the JAN1N6128 is RoHS compliant and UL recognised.
The JAN1N6128 is capable of protecting sensitive electronics against electrostatic discharge and other voltage transients. It is typically used in computers, phones, tablets, and other portable electronic equipment. The diode is a bidirectional device that operates on a breakdown principle. It is designed to "clamp" exceeding voltages between a positive and a negative line, thus preventing overvoltage and electrostatic discharge to the circuit.
The JAN1N6128 has a clamping voltage of 2.6 V and a maximum battery reverse leakage current of 1 A. Its maximum repetitive peak reverse voltage is 6 V and its maximum repetitive peak pulse forward current is 6 A. The device is designed to reduce the level of voltage transients that can occur in the circuit due to ESD, lightning, and other sources.
The JAN1N6128 is designed to dissipate surge power and prevent other transient voltage events from damaging the internal components of a circuit. It act as a sacrificial component that absorbs the excess power and limits the peak voltage to an acceptable level. The device can be connected directly between ground and supply lines in order to reduce the chances of high voltage or electrostatic discharge damaging the circuit.
In summary, the JAN1N6128 is a unidirectional diode designed to protect electronic components from electrostatic discharge and other voltage transients. It is capable of dissipating surge power and preventing voltage events from damaging circuit components. The diode has a low breakdown voltage of 2.6 V and a maximum battery reverse leakage current of 1 A. It has a repetitive peak reverse voltage rating of 6 V and a repetitive peak pulse forward current rating of 6 A. The device is RoHS compliant and UL recognised, making it an ideal choice for mobile and other portable electronics.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6163A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 56V 103.1V C AX... |
JAN1N6172A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136.8V 245.7V C... |
JAN1N6466 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6466US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V B S... |
JAN1N6467 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
JAN1N6467US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V B S... |
JAN1N6469 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V AXIAL |
JAN1N6469US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V GMELF |
JAN1N6474 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6164A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 62.2V 112.8V C ... |
JAN1N6165A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 69.2V 125.1V C ... |
JAN1N6166A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 76V 137.6V C AX... |
JAN1N6167A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 86.6V 151.3V C ... |
JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
JAN1N6173A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 152V 273V C AXI... |
JAN1N6142US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 7.6V 15.23V C S... |
JAN1N6143AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 15.6V C SQ... |
JAN1N6143US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 16.38V C S... |
JAN1N6144AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 16.9V C SQ... |
JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
JAN1N6145US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 19.11V C S... |
JAN1N6146AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 21V C SQ-... |
JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
JAN1N6147AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 22.3V C S... |
JAN1N6147US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 23.42V C ... |
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