JAN1N6130 Circuit Protection |
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Allicdata Part #: | 1086-19518-ND |
Manufacturer Part#: |
JAN1N6130 |
Price: | $ 10.98 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 76V 144.48V AXIAL |
More Detail: | N/A |
DataSheet: | JAN1N6130 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 9.97633 |
Voltage - Clamping (Max) @ Ipp: | 144.48V |
Supplier Device Package: | Axial |
Package / Case: | B, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 3.42A |
Series: | Military, MIL-PRF-19500/516 |
Voltage - Breakdown (Min): | 90.25V |
Voltage - Reverse Standoff (Typ): | 76V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The JAN1N6130 is a unidirectional, highly efficient TVS (Transient Voltage Suppression) diode that is used for suppressing high-energy transients found in transient voltage surge suppression applications. It is a powerful, easy-to-use, and reliable tool for providing effective ESD (electrostatic discharge) protection in a wide range of electrical and electronic products.
The JAN1N6130 is especially effective in suppressing transient voltage surges caused by lightning strikes and power line disturbances such as voltage transients. In addition to these primary applications, the JAN1N6130 can also be used in any application where transient-voltage protection is required.
The JAN1N6130 is a reverse-biased, low-capacitance, unidirectional device that is capable of suppressing voltage transients of up to 5 kV, making it ideal for a wide range of applications. The device offers protection from transients by suppressing high-energy surges and cutting off excessive voltage transients before they can cause permanent damage. The reverse-biased structure of the JAN1N6130 allows it to be used in both series and parallel configurations with other components to provide ESD protection in high-speed communication systems and cabling. Additionally, the JAN1N6130 can be used in protection circuits with power line filters, fuses, varistors, and MOVs (Metal Oxide Varistors).
The working principle of the JAN1N6130 is based on a basic concept: when a surge voltage is applied to the anode of the device, a current travels through the cathode of the device and the external circuit. This current generates a strong reverse-biased electric field that is strong enough to punch through the depletion layer of the junction, creating an avalanching effect. This in turn creates a sudden increase in the resistance of the device – the so-called surge-shouldering effect – and causes the voltage to drop suddenly, thus protecting the circuit from further damage.
The JAN1N6130 also features a low, reverse-biased current leakage, reducing the overall power consumption of the device. This feature, combined with its low capacitance and its high surge-current-handling capability, makes the JAN1N6130 an ideal choice for applications that require efficient transient-voltage suppression.
Furthermore, the JAN1N6130 is highly resistant to thermal shock, making it suitable for use in a wide range of temperatures and humidity levels. The device is also certified for use in a wide range of industries, including aerospace, automotive, consumer electronics, medical, military and telecommunications.
The JAN1N6130 is a powerful, reliable and easy-to-use tool for optimal ESD protection in a wide range of applications. It is capable of suppressing voltage transients of up to 5 kV, making it ideal for a wide range of applications. Additionally, its low capacitance and current leakage, along with its high thermal shock resistance, make it the perfect choice for providing robust and reliable transient-voltage protection.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6466US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V B S... |
JAN1N6467 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
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JAN1N6474 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6164A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 62.2V 112.8V C ... |
JAN1N6165A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 69.2V 125.1V C ... |
JAN1N6166A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 76V 137.6V C AX... |
JAN1N6167A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 86.6V 151.3V C ... |
JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
JAN1N6173A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 152V 273V C AXI... |
JAN1N6142US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 7.6V 15.23V C S... |
JAN1N6143AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 15.6V C SQ... |
JAN1N6143US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 16.38V C S... |
JAN1N6144AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 16.9V C SQ... |
JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
JAN1N6145US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 19.11V C S... |
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JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
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