JAN1N6107 Circuit Protection |
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Allicdata Part #: | 1086-2145-ND |
Manufacturer Part#: |
JAN1N6107 |
Price: | $ 11.00 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 8.4V 16.38V AXIAL |
More Detail: | N/A |
DataSheet: | JAN1N6107 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 9.98872 |
Voltage - Clamping (Max) @ Ipp: | 16.38V |
Supplier Device Package: | Axial |
Package / Case: | B, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 30.4A |
Series: | Military, MIL-PRF-19500/516 |
Voltage - Breakdown (Min): | 9.93V |
Voltage - Reverse Standoff (Typ): | 8.4V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The JAN1N6107 is a silicon unilateral inline TVS diode designed specifically for use in clamping applications. This device provides superior protection against transient surges and ESD. It is designed to protect one line from high voltage transients present on the system. Offering excellent transient clamping protection, the JAN1N6107 is well-suited for protecting sensitive electronic and digital circuitry.
The JAN1N6107 is an unidirectional diode designed to protect a number of different circuit lines including USB, Ethernet, VGA, consumer video, and HDMI as well as other high voltage interfaces. This device is designed to provide protection against transients and ESD during the transmission of data and signals between different components in a sophisticated system.
The JAN1N6107 uses a simple thyristor-based construction to achieve transient protection from a wide range of high voltage transients. The device includes two main sections to provide the required protection: the silicon die and the package. The silicon die of the JAN1N6107 contains the transistors, diodes, and other active components required to support the TVS diode. It is designed to limit the voltage across the junction from reaching catastrophic levels during a transient surge event.
The package is designed to protect the diode from physical damage and contains the mounting hole, allowing easy attachment to the board. The package also provides increased insulation between the board and the diode, reducing the chances of accidental shorting. It is important to use the proper voltage and current rating for the JAN1N6107 to avoid any potential damage to the diode.
In operation, the JAN1N6107 starts to conduct current when the breakdown voltage of the junction is exceeded. This breakdown voltage is typically 5V for these devices. Once the current exceeds the rated maximum, the device will begin to clamp the voltage, limiting it to a safe voltage. This process occurs in less than microseconds, so the transient is effectively clamped and will not damage the connected components.
When the transient stops, the device will then automatically reset itself, allowing the circuit to continue to function normally. This resetting process is an integral part of the TVS diode and is an important feature of the JAN1N6107. It ensures that the device will be able to provide protection even after repeated transient events, so the device is always ready to protect the system.
The JAN1N6107 is an ideal choice for use in applications where the protection of sensitive circuits from transients and ESD is a necessity. Its compact size, low capacitance, and robust ESD and pulse protection make it an ideal choice for a wide range of high voltage applications. This device is both cost-effective and reliable, so it is becoming increasingly popular for use in modern electronics.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6164A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 62.2V 112.8V C ... |
JAN1N6165A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 69.2V 125.1V C ... |
JAN1N6166A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 76V 137.6V C AX... |
JAN1N6167A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 86.6V 151.3V C ... |
JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
JAN1N6173A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 152V 273V C AXI... |
JAN1N6142US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 7.6V 15.23V C S... |
JAN1N6143AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 15.6V C SQ... |
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JAN1N6144AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 16.9V C SQ... |
JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
JAN1N6145US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 19.11V C S... |
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JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
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