JAN1N6132 Circuit Protection |
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Allicdata Part #: | 1086-19526-ND |
Manufacturer Part#: |
JAN1N6132 |
Price: | $ 10.98 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 91.2V 173.36V AXIAL |
More Detail: | N/A |
DataSheet: | JAN1N6132 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
100 +: | $ 9.97633 |
Voltage - Clamping (Max) @ Ipp: | 173.36V |
Supplier Device Package: | Axial |
Package / Case: | B, Axial |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 500W |
Current - Peak Pulse (10/1000µs): | 2.85A |
Series: | Military, MIL-PRF-19500/516 |
Voltage - Breakdown (Min): | 108.3V |
Voltage - Reverse Standoff (Typ): | 91.2V |
Bidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS - Diodes
Transient Voltage Suppressor Diodes, commonly known as TVS Diodes, are used for multiple applications such as protecting electronic devices from voltage spikes and surges. They protect against electro-static discharge, voltage surge, over-voltage, induced lightning, and electrical noise. These diodes are a type of semiconductor diode that acts like an electronic switch, short-circuiting any excessive voltage above a desired threshold to ground. Therefore, they offer both overvoltage and overcurrent protection.
JAN1N6132 Application Field and Working Principle
The JAN1N6132 TVS diode is typically used as a transient voltage suppressor in low-voltage AC line applications, such as 4 kHz to 300 kHz frequency ranges. It is used for protection against over-voltage, induced lightning, ESD, and electrical noise. It works as a two-terminal, voltage-dependent component designed for a unidirectional path across the junction. The body of the diode consists of a p-type material, which is then connected to an n-type material to form a diode junction. This junction is where the suppression of transient voltages occurs.
When an external electric field is applied to the diode, a series of minority carriers are injected into the p-type material from the n-type material. This forms an electron-hole pair called a depletion region. The hole and electron interact to form the diode junction. When an excessive voltage is applied to the diode, the depletion region becomes stronger, resulting in the diode clamping the voltage at a predetermined voltage level. This provides protection from any voltage aberrations in the system.
The JAN1N6132 has a surface mounted device that is made up of two regions, one n-type and one p-type. The n-type region is the cathode, while the p-type region is the anode. The diode junction is formed when the two regions meet. The diode junction is also referred to as the reverse breakdown voltage, and is typically in the range of 8V-25V.
The JAN1N6132 has a maximum clamping voltage of 9.3V. This is the maximum voltage the diode can handle before it is permanently damaged, and therefore it provides overvoltage protection to the device. It also has a fast response time, with the typical response time being around 25ns. This enables it to quickly respond to any transient voltages and protect the system from any electrical noise or overvoltages that may occur.
The JAN1N6132 also has a high capacitance, which is in the range of 10pF. This high capacitance helps it to absorb transient pulses quickly and more efficiently, and also reduces the effect of transients on surrounding components.
In conclusion, the JAN1N6132 TVS diode is a useful device for providing overvoltage and overcurrent protection. It is mainly used in low voltage AC line applications, and also helps to reduce noise and absorb transient pulses quickly and efficiently.
The specific data is subject to PDF, and the above content is for reference
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JAN1N6163A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 56V 103.1V C AX... |
JAN1N6172A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136.8V 245.7V C... |
JAN1N6466 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6466US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V B S... |
JAN1N6467 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
JAN1N6467US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V B S... |
JAN1N6469 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V AXIAL |
JAN1N6469US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V GMELF |
JAN1N6474 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6164A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 62.2V 112.8V C ... |
JAN1N6165A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 69.2V 125.1V C ... |
JAN1N6166A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 76V 137.6V C AX... |
JAN1N6167A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 86.6V 151.3V C ... |
JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
JAN1N6173A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 152V 273V C AXI... |
JAN1N6142US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 7.6V 15.23V C S... |
JAN1N6143AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 15.6V C SQ... |
JAN1N6143US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 16.38V C S... |
JAN1N6144AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 16.9V C SQ... |
JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
JAN1N6145US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 19.11V C S... |
JAN1N6146AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 21V C SQ-... |
JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
JAN1N6147AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 22.3V C S... |
JAN1N6147US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 23.42V C ... |
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