JAN1N6474US Circuit Protection |
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Allicdata Part #: | 1086-2293-ND |
Manufacturer Part#: |
JAN1N6474US |
Price: | $ 21.20 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 30.5V 47.5V GMELF |
More Detail: | N/A |
DataSheet: | JAN1N6474US Datasheet/PDF |
Quantity: | 28 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
1 +: | $ 19.26540 |
10 +: | $ 17.82080 |
25 +: | $ 16.37570 |
Voltage - Clamping (Max) @ Ipp: | 47.5V |
Supplier Device Package: | G-MELF (D-5C) |
Package / Case: | SQ-MELF, G |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 181A (8/20µs) |
Series: | Military, MIL-PRF-19500/552 |
Voltage - Breakdown (Min): | 33V |
Voltage - Reverse Standoff (Typ): | 30.5V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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The JAN1N6474US is a transient voltage suppressor (TVS) diode or a voltage-dependent surge suppressor (VDS). When a TVS diode is exposed to a high voltage transient, it will diverge by emitting a short-term source of current limited by its limit. This diverted current is designed to safely steer away the transient event.
TVS diodes come in a wide variety of configurations, the most common being the unidirectional type. This type of diode provides protection from voltage spikes of one polarity. A bi-directional type of TVS diode provides protection from both positive and negative voltage transients.
The JAN1N6474US is a unidirectional but robust TVS diode with a maximum peak pulse power of 500w. It has a working voltage of 5.0V and a breakdown voltage of 6.5V. It has a very low clamping voltage of 7.7V and a very low clamping capacitance of only 4.6pF. From the datasheet, the maximum reverse leakage current at 6.5V is specified at 100uA. This is quite low and close to ideal for TVS diode applications. Note, that the TVS diode also has a low capacitance, meaning that there is not much of a voltage drop on the signal when the TVS diode is triggered,
The majority of portable and low voltage applications require TVS diodes due to their ability to protect circuits from potentially damaging voltage transients. Typical applications are in computer peripherals, portable battery-powered devices, automotive electronics, and other small devices. The JAN1N6474US can also be used in high voltage applications to provide protection in harsh environments. The JAN1N6474US is stable in temperatures up to 125°C (257°F) and has a high power rating, making it suitable for use in high voltage environments. It is also highly robust, with a low reverse-voltage leakage and a maximum peak power rating of 500 watts.
To illustrate the working of a typical TVS diode, the typical application circuit of the JAN1N6474US is shown below. A brief description of the circuit is as follows: A component is connected to the source, and the TVS diode is connected between the source and ground. When the voltage across the TVS diode exceeds the breakdown voltage, the diode conducts and the surge pulse is steered to ground safely. The input current is limited by the reverse leakage current of the diode. This also protects the components downstream from the source
In summary, the JAN1N6474US is a unidirectional TVS diode designed for applications in portable and low voltage electronic circuits. It is highly robust and can withstand temperatures up to 125°C (257°F). It has a low reverse leakage current of only 100uA and a high peak pulse power of 500W, making it ideal for protecting circuits from high voltage transients. Its low capacitance also ensures that there is very little signal loss. This is essential for applications where precise timing is critical. The JAN1N6474US is a great choice for any application requiring robust surge protection.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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JAN1N6104US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.2V 12.71V B S... |
JAN1N6105US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 6.9V 14.07V B S... |
JAN1N6109US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 9.9V 19.11V B S... |
JAN1N6112US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 13.7V 26.36V B ... |
JAN1N6113AUS | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V B S... |
JAN1N6115US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 18.2V 34.97V B ... |
JAN1N6116US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 20.6V 39.27V B ... |
JAN1N6129A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 69.2V 125.1V AX... |
JAN1N6139A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5.7V 11.2V C AX... |
JAN1N6149A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 15.2V 27.7V C A... |
JAN1N6158A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 35.8V 64.6V C A... |
JAN1N6163A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 56V 103.1V C AX... |
JAN1N6172A | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 136.8V 245.7V C... |
JAN1N6466 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6466US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V B S... |
JAN1N6467 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V AXI... |
JAN1N6467US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 40.3V 63.5V B S... |
JAN1N6469 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V AXIAL |
JAN1N6469US | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 9V GMELF |
JAN1N6474 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 30.5V 47.5V AXI... |
JAN1N6164A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 62.2V 112.8V C ... |
JAN1N6165A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 69.2V 125.1V C ... |
JAN1N6166A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 76V 137.6V C AX... |
JAN1N6167A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 86.6V 151.3V C ... |
JAN1N6168A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 91.2V 165.1V C ... |
JAN1N6169A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 98.8V 178.8V C ... |
JAN1N6171A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 121.6V 218.4V C... |
JAN1N6173A | Microsemi Co... | 15.04 $ | 1000 | TVS DIODE 152V 273V C AXI... |
JAN1N6142US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 7.6V 15.23V C S... |
JAN1N6143AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 15.6V C SQ... |
JAN1N6143US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 8.4V 16.38V C S... |
JAN1N6144AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 16.9V C SQ... |
JAN1N6144US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.1V 17.75V C S... |
JAN1N6145AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 18.2V C SQ... |
JAN1N6145US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 9.9V 19.11V C S... |
JAN1N6146AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 21V C SQ-... |
JAN1N6146US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 11.4V 22.05V C ... |
JAN1N6147AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 22.3V C S... |
JAN1N6147US | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 12.2V 23.42V C ... |
JAN1N6148AUS | Microsemi Co... | 15.06 $ | 1000 | TVS DIODE 13.7V 25.1V C S... |
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