Allicdata Part #: | 1086-20050-ND |
Manufacturer Part#: |
JAN1N6660CCT1 |
Price: | $ 129.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | DIODE ARRAY SCHOTTKY 45V TO254AA |
More Detail: | Diode Array 1 Pair Common Cathode Schottky 45V 15A... |
DataSheet: | JAN1N6660CCT1 Datasheet/PDF |
Quantity: | 1000 |
100 +: | $ 116.12600 |
Series: | Military, MIL-PRF-19500/608 |
Packaging: | Bulk |
Part Status: | Active |
Diode Configuration: | 1 Pair Common Cathode |
Diode Type: | Schottky |
Voltage - DC Reverse (Vr) (Max): | 45V |
Current - Average Rectified (Io) (per Diode): | 15A |
Voltage - Forward (Vf) (Max) @ If: | 750mV @ 15A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 1mA @ 45V |
Operating Temperature - Junction: | -65°C ~ 150°C |
Mounting Type: | Through Hole |
Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
Supplier Device Package: | TO-254AA |
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The JAN1N6660CCT1 is a 1.60A surface mounted silicon rectifier diode array. A diode array features integrated diodes in a single package, providing enhanced protection from overvoltage and power surges in applications such as medical systems, telecom, industrial and automotive.The JAN1N6660CCT1 consist of two independent diodes inside a small, single package. Its two integrated diodes provide a single, easy to use solution to protect your systems against a variety of overvoltage and/or power surges. Each of these integrated diodes consists of a p-type semiconductor junction and an n-type semiconductor junction, which together form a rectifier diode.The JAN1N6660CCT1 has a maximum reverse pulsed power dissipation of 920mW and a maximum peak forward surge current of 8A, making it ideal for applications that require protection from large surges. The maximum reverse voltage of the JAN1N6660CCT1 is 6.4V, which allows it to protect against voltages that are six times that of a single diode. The device also has a maximum operating temperature of up to 175°C.Applications of JAN1N6660CCT1 include industrial and automotive systems, telecom, UPS systems, medical systems and other applications that require overvoltage and power surge protection. The diode array can also be used in applications that require reverse polarity protection.The main working principle of the JAN1N6660CCT1 is based on the p-n junction of a diode that acts as a voltage regulator. When a positive voltage is applied to the diode, the current flows through the diode, allowing it to regulate the voltage level. When a negative voltage is applied, the current does not flow and the diode blocks the flow of current. This is how the diode provides protection against power surges, polarity reversal and overvoltage.The JAN1N6660CCT1 is an ideal device for applications that require overvoltage and power surge protection. It also has a high maximum operating temperature and good heat dissipation, making it suitable for applications that require reliable performance in harsh environments.
The specific data is subject to PDF, and the above content is for reference
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