JANTX2N6760 Allicdata Electronics
Allicdata Part #:

JANTX2N6760-ND

Manufacturer Part#:

JANTX2N6760

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH TO-204AA TO-3
More Detail: N-Channel 400V 5.5A (Tc) 4W (Ta), 75W (Tc) Through...
DataSheet: JANTX2N6760 datasheetJANTX2N6760 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-204AA, TO-3
Supplier Device Package: TO-204AA (TO-3)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 75W (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Series: Military, MIL-PRF-19500/542
Rds On (Max) @ Id, Vgs: 1.22 Ohm @ 5.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drain to Source Voltage (Vdss): 400V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JANTX2N6760 is a high-performance Field-Effect Transistor (FET). It is designed to deliver superior performance in a wide variety of applications, ranging from power management, motor control, and telecommunications. This general-purpose FET can also be utilized in high-frequency electronic equipment, and its low gate-input capacitance is advantageous in RF or microwave amplifiers.

The JANTX2N6760 is a vertical channel enhancement mode FET, which consists of a source, drain, and control electrodes forming a channel between the source and drain regions. The channel is created by the application of a voltage to the drain region, producing an inversion layer at the interface between the source and drain regions. This inversion layer carries both majority and minority carriers, allowing current to flow through it.

The FET has a low input capacitance and excellent transconductance, making it ideal for RF amplifiers, power management circuits, and pulse waveform applications. Its high-frequency characteristics make it suitable for high-frequency switching, switching power supplies, and digital communications applications. The JANTX2N6760 also has excellent thermal performance, with a maximum junction temperature rating of +125°C. Additionally, it is rated for a drain current of up to 1 amp and drain-source voltage of up to 40 volts.

The FET\'s working principle is based on the principle of transistor action. When a voltage is applied to the drain region, a channel is formed between the source and drain regions. Current then flows through this channel when a gate-to-source voltage is applied. This gate-to-source voltage alters the conductivity of the channel and provides control of the current passing through it.

This FET is suitable for many different applications due to its features, such as low gate-input capacitance, high frequency operation, and excellent thermal performance. It is also suitable for applications that require high voltage and current handling, such as power management circuits and pulse waveform applications. The JANTX2N6760 is an ideal solution for a variety of applications, including power management, motor control, telecommunications, and other high-frequency electronic circuits.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "JANT" Included word is 40
Part Number Manufacturer Price Quantity Description
JANTXV1N6141A Microsemi Co... 38.35 $ 1000 TVS DIODE 6.9V 13.4V C AX...
JANTX1N6103A Microsemi Co... 0.0 $ 1000 TVS DIODE 5.7V 11.2V AXIA...
JANTX1N6103US Microsemi Co... 0.0 $ 1000 TVS DIODE 5.7V 11.76V B S...
JANTX1N6104 Microsemi Co... 0.0 $ 1000 TVS DIODE 6.2V 12.71V AXI...
JANTX1N6104A Microsemi Co... 0.0 $ 1000 TVS DIODE 6.2V 12.1V AXIA...
JANTX1N6104AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 6.2V 12.1V B SQ...
JANTX1N6105 Microsemi Co... 0.0 $ 1000 TVS DIODE 6.9V 14.07V AXI...
JANTX1N6105AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 6.9V 13.4V B SQ...
JANTX1N6105US Microsemi Co... 0.0 $ 1000 TVS DIODE 6.9V 14.07V B S...
JANTX1N6106 Microsemi Co... 0.0 $ 1000 TVS DIODE 7.6V 15.23V AXI...
JANTX1N6106AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 7.6V 14.5V B SQ...
JANTX1N6107 Microsemi Co... 0.0 $ 1000 TVS DIODE 8.4V 16.38V AXI...
JANTX1N6107A Microsemi Co... 0.0 $ 1000 TVS DIODE 8.4V 15.6V AXIA...
JANTX1N6107AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 8.4V 15.6V B SQ...
JANTX1N6107US Microsemi Co... 0.0 $ 1000 TVS DIODE 8.4V 16.38V B S...
JANTX1N6108 Microsemi Co... 0.0 $ 1000 TVS DIODE 9.1V 17.75V AXI...
JANTX1N6108A Microsemi Co... 0.0 $ 1000 TVS DIODE 9.1V 16.9V AXIA...
JANTX1N6108AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 9.1V 16.9V B SQ...
JANTX1N6108US Microsemi Co... 0.0 $ 1000 TVS DIODE 9.1V 17.75V B S...
JANTX1N6109 Microsemi Co... 0.0 $ 1000 TVS DIODE 9.9V 19.11V AXI...
JANTX1N6109A Microsemi Co... 0.0 $ 1000 TVS DIODE 9.9V 18.2V AXIA...
JANTX1N6110 Microsemi Co... 0.0 $ 1000 TVS DIODE 11.4V 22.05V AX...
JANTX1N6110US Microsemi Co... 0.0 $ 1000 TVS DIODE 11.4V 22.05V B ...
JANTX1N6111 Microsemi Co... 0.0 $ 1000 TVS DIODE 12.2V 23.42V AX...
JANTX1N6111A Microsemi Co... 0.0 $ 1000 TVS DIODE 12.2V 22.3V AXI...
JANTX1N6111AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 12.2V 22.3V B S...
JANTX1N6111US Microsemi Co... 0.0 $ 1000 TVS DIODE 12.2V 23.42V B ...
JANTX1N6112 Microsemi Co... 0.0 $ 1000 TVS DIODE 13.7V 26.36V AX...
JANTX1N6112AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 13.7V 25.1V B S...
JANTX1N6112US Microsemi Co... 0.0 $ 1000 TVS DIODE 13.7V 26.36V B ...
JANTX1N6113 Microsemi Co... 0.0 $ 1000 TVS DIODE 15.2V 29.09V AX...
JANTX1N6113A Microsemi Co... 0.0 $ 1000 TVS DIODE 15.2V 27.7V AXI...
JANTX1N6114 Microsemi Co... 0.0 $ 1000 TVS DIODE 16.7V 32.03V AX...
JANTX1N6114US Microsemi Co... 0.0 $ 1000 TVS DIODE 16.7V 32.03V B ...
JANTX1N6115 Microsemi Co... 0.0 $ 1000 TVS DIODE 18.2V 34.97V AX...
JANTX1N6115A Microsemi Co... 0.0 $ 1000 TVS DIODE 18.2V 33.3V AXI...
JANTX1N6115AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 18.2V 33.3V B S...
JANTX1N6115US Microsemi Co... 0.0 $ 1000 TVS DIODE 18.2V 34.97V B ...
JANTX1N6116 Microsemi Co... 0.0 $ 1000 TVS DIODE 20.6V 39.27V AX...
JANTX1N6116AUS Microsemi Co... 0.0 $ 1000 TVS DIODE 20.6V 37.4V B S...
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics