Allicdata Part #: | JANTX2N6760-ND |
Manufacturer Part#: |
JANTX2N6760 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET N-CH TO-204AA TO-3 |
More Detail: | N-Channel 400V 5.5A (Tc) 4W (Ta), 75W (Tc) Through... |
DataSheet: | JANTX2N6760 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Package / Case: | TO-204AA, TO-3 |
Supplier Device Package: | TO-204AA (TO-3) |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 4W (Ta), 75W (Tc) |
FET Feature: | -- |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 39nC @ 10V |
Series: | Military, MIL-PRF-19500/542 |
Rds On (Max) @ Id, Vgs: | 1.22 Ohm @ 5.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Tc) |
Drain to Source Voltage (Vdss): | 400V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Bulk |
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The JANTX2N6760 is a high-performance Field-Effect Transistor (FET). It is designed to deliver superior performance in a wide variety of applications, ranging from power management, motor control, and telecommunications. This general-purpose FET can also be utilized in high-frequency electronic equipment, and its low gate-input capacitance is advantageous in RF or microwave amplifiers.
The JANTX2N6760 is a vertical channel enhancement mode FET, which consists of a source, drain, and control electrodes forming a channel between the source and drain regions. The channel is created by the application of a voltage to the drain region, producing an inversion layer at the interface between the source and drain regions. This inversion layer carries both majority and minority carriers, allowing current to flow through it.
The FET has a low input capacitance and excellent transconductance, making it ideal for RF amplifiers, power management circuits, and pulse waveform applications. Its high-frequency characteristics make it suitable for high-frequency switching, switching power supplies, and digital communications applications. The JANTX2N6760 also has excellent thermal performance, with a maximum junction temperature rating of +125°C. Additionally, it is rated for a drain current of up to 1 amp and drain-source voltage of up to 40 volts.
The FET\'s working principle is based on the principle of transistor action. When a voltage is applied to the drain region, a channel is formed between the source and drain regions. Current then flows through this channel when a gate-to-source voltage is applied. This gate-to-source voltage alters the conductivity of the channel and provides control of the current passing through it.
This FET is suitable for many different applications due to its features, such as low gate-input capacitance, high frequency operation, and excellent thermal performance. It is also suitable for applications that require high voltage and current handling, such as power management circuits and pulse waveform applications. The JANTX2N6760 is an ideal solution for a variety of applications, including power management, motor control, telecommunications, and other high-frequency electronic circuits.
The specific data is subject to PDF, and the above content is for reference
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