| Allicdata Part #: | JANTXV2N6766T1-ND |
| Manufacturer Part#: |
JANTXV2N6766T1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Microsemi Corporation |
| Short Description: | MOSFET N-CH |
| More Detail: | N-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through... |
| DataSheet: | JANTXV2N6766T1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Package / Case: | TO-254-3, TO-254AA (Straight Leads) |
| Supplier Device Package: | TO-254AA |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 4W (Ta), 150W (Tc) |
| FET Feature: | -- |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 115nC @ 10V |
| Series: | Military, MIL-PRF-19500/543 |
| Rds On (Max) @ Id, Vgs: | 90 mOhm @ 30A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Current - Continuous Drain (Id) @ 25°C: | 30A (Tc) |
| Drain to Source Voltage (Vdss): | 200V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Obsolete |
| Packaging: | Bulk |
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The JANTXV2N6766T1 is a N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Microsemi Corporation with high frequency and high drain source resistance. This type of transistor is typically used as an amplifier, to switch large electrical currents, and when used in conjuncture with other transistors and capacitors, it can achieve high gain levels. This device has many applications in the electronics industry and is suitable for use in a range of electronic-related products.
The properties of the JANTXV2N6766T1 make it suitable for applications such as audio amplifiers, communications devices, and general digital-logic circuits. This device operates in both enhancement and depletion modes, and it offers high gain and fast switching response time. The maximum drain source voltage of this device is 30V, with a maximum current of 20mA, and a minimum on-state resistance of 0.025 ohms. The device also offers low gate threshold voltage, making it ideal for applications where low-level signals must be amplified. Additionally, it has a low on-resistance and can operate at high-frequencies.
The unique structure and geometry of MOSFETs make them very suitable for high-frequency applications. The majority of MOSFETs are constructed of a source and drain, with their source and drain connected to a gate via a semiconductor channel. When the gate is held at a negative voltage with respect to the source, current flows through the channel and the transistor operates in enhancement mode. Alternatively, if the gate is held at a positive voltage with respect to the source, the channel is reversed-biased, and the transistor operates in depletion mode. This bi-modal ability not only increases the range of applications possible, but also reduces the complexity of many complex circuits, as the transistor can switch functionality simply by changing the potential on the gate.
The JANTXV2N6766T1 is designed to handle high frequencies, enabling it to handle a range of high-frequency signals and to control the passage of current quickly. The high frequency capabilities of this device also allow it to be used in a range of signal-processing applications, as it can accurately process signals in a timely manner. Additionally, the device can handle high loads, and its low drain source resistance ensures that it can handle high levels of current.
In conclusion, the JANTXV2N6766T1 is an ideal choice for a range of high-frequency applications, as it can process high-frequency signals quickly and accurately. Its high-gain capabilities, low-threshold voltage, and low on-resistance make it an excellent choice for audio amplifiers, communications devices, and general digital-logic circuits. Finally, its bi-modal operation makes it suitable for a range of switching applications as well.
The specific data is subject to PDF, and the above content is for reference
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JANTXV2N6766T1 Datasheet/PDF