JANTXV2N6766T1 Allicdata Electronics
Allicdata Part #:

JANTXV2N6766T1-ND

Manufacturer Part#:

JANTXV2N6766T1

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: MOSFET N-CH
More Detail: N-Channel 200V 30A (Tc) 4W (Ta), 150W (Tc) Through...
DataSheet: JANTXV2N6766T1 datasheetJANTXV2N6766T1 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Vgs(th) (Max) @ Id: 4V @ 250µA
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
FET Feature: --
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Series: Military, MIL-PRF-19500/543
Rds On (Max) @ Id, Vgs: 90 mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk 
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The JANTXV2N6766T1 is a N-Channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) manufactured by Microsemi Corporation with high frequency and high drain source resistance. This type of transistor is typically used as an amplifier, to switch large electrical currents, and when used in conjuncture with other transistors and capacitors, it can achieve high gain levels. This device has many applications in the electronics industry and is suitable for use in a range of electronic-related products.

The properties of the JANTXV2N6766T1 make it suitable for applications such as audio amplifiers, communications devices, and general digital-logic circuits. This device operates in both enhancement and depletion modes, and it offers high gain and fast switching response time. The maximum drain source voltage of this device is 30V, with a maximum current of 20mA, and a minimum on-state resistance of 0.025 ohms. The device also offers low gate threshold voltage, making it ideal for applications where low-level signals must be amplified. Additionally, it has a low on-resistance and can operate at high-frequencies.

The unique structure and geometry of MOSFETs make them very suitable for high-frequency applications. The majority of MOSFETs are constructed of a source and drain, with their source and drain connected to a gate via a semiconductor channel. When the gate is held at a negative voltage with respect to the source, current flows through the channel and the transistor operates in enhancement mode. Alternatively, if the gate is held at a positive voltage with respect to the source, the channel is reversed-biased, and the transistor operates in depletion mode. This bi-modal ability not only increases the range of applications possible, but also reduces the complexity of many complex circuits, as the transistor can switch functionality simply by changing the potential on the gate.

The JANTXV2N6766T1 is designed to handle high frequencies, enabling it to handle a range of high-frequency signals and to control the passage of current quickly. The high frequency capabilities of this device also allow it to be used in a range of signal-processing applications, as it can accurately process signals in a timely manner. Additionally, the device can handle high loads, and its low drain source resistance ensures that it can handle high levels of current.

In conclusion, the JANTXV2N6766T1 is an ideal choice for a range of high-frequency applications, as it can process high-frequency signals quickly and accurately. Its high-gain capabilities, low-threshold voltage, and low on-resistance make it an excellent choice for audio amplifiers, communications devices, and general digital-logic circuits. Finally, its bi-modal operation makes it suitable for a range of switching applications as well.

The specific data is subject to PDF, and the above content is for reference

Related Products
Search Part number : "JANT" Included word is 40
Part Number Manufacturer Price Quantity Description
JANTXV1N6117US Microsemi Co... 0.0 $ 1000 TVS DIODE 22.8V 43.68V B ...
JANTXV1N6132A Microsemi Co... 0.0 $ 1000 TVS DIODE 91.2V 165.1V AX...
JANTX1N6046A Microsemi Co... 0.0 $ 1000 TVS DIODE 17V 27.7V DO13
JANTX1N6121US Microsemi Co... 0.0 $ 1000 TVS DIODE 32.7V 62.06V B ...
JANTX1N6124US Microsemi Co... 0.0 $ 1000 TVS DIODE 42.6V 80.85V B ...
JANTX1N6469US Microsemi Co... 12.91 $ 1000 TVS DIODE 5V 9V GMELF
JANTX1N6141A Microsemi Co... 26.31 $ 1000 TVS DIODE 6.9V 13.4V C AX...
JANTX2N2857UB Microsemi Co... 0.0 $ 1000 TRANS NPN 15V 0.04ARF Tra...
JANTXV2N2222AL Microsemi Co... 8.67 $ 1000 TRANS NPN 50V 0.8ABipolar...
JANTX2N3499 Microsemi Co... 13.17 $ 1000 TRANS NPN 100V 0.5A TO-39...
JANTXV2N3499 Microsemi Co... 14.36 $ 1000 TRANS NPN 100V 0.5A TO-39...
JANTXV2N5152L Microsemi Co... 14.41 $ 1000 TRANS NPN 80V 2A TO5Bipol...
JANTX2N5672 Microsemi Co... 0.0 $ 1000 TRANS NPN 120V 30A TO-3Bi...
JANTXV2N3635 Microsemi Co... 0.0 $ 1000 TRANS PNP 140V 1ABipolar ...
JANTXV2N2324AS Microsemi Co... 0.0 $ 1000 DIODE SILICON CTRL TO39SC...
JANTX1N976C-1 Microsemi Co... 4.17 $ 1000 DIODE ZENER 43V 500MW DO3...
JANTX1N985C-1 Microsemi Co... 4.17 $ 1000 DIODE ZENER 100V 500MW DO...
JANTX1N973D-1 Microsemi Co... 5.22 $ 1000 DIODE ZENER 33V 500MW DO3...
JANTX1N746C-1 Microsemi Co... 5.66 $ 1000 DIODE ZENER 3.3V 500MW DO...
JANTXV1N4968 Microsemi Co... 7.61 $ 1000 DIODE ZENER 27V 5W AXIALZ...
JANTXV1N5536B-1 Microsemi Co... 8.01 $ 1000 DIODE ZENER 16V 500MW DO3...
JANTXV1N825UR-1 Microsemi Co... 8.46 $ 1000 DIODE ZENER 6.2V 500MW DO...
JANTX1N4099C-1 Microsemi Co... 9.3 $ 1000 DIODE ZENER 6.8V 500MW DO...
JANTX1N4120C-1 Microsemi Co... 9.3 $ 1000 DIODE ZENER 30V 500MW DO3...
JANTXV1N4110UR-1 Microsemi Co... 9.87 $ 1000 DIODE ZENER 16V 500MW DO2...
JANTX1N966CUR-1 Microsemi Co... 10.68 $ 1000 DIODE ZENER 16V 500MW DO2...
JANTX1N5538D-1 Microsemi Co... 13.97 $ 1000 DIODE ZENER 18V 500MW DO3...
JANTX1N6327US Microsemi Co... 14.76 $ 1000 DIODE ZENER 13V 500MW B S...
JANTXV1N4117CUR-1 Microsemi Co... 18.34 $ 1000 DIODE ZENER 25V 500MW DO2...
JANTX1N4114DUR-1 Microsemi Co... 19.37 $ 1000 DIODE ZENER 20V 500MW DO2...
JANTXV1N4461C Microsemi Co... 24.63 $ 1000 DIODE ZENER 6.8V 1.5W DO4...
JANTXV1N4478C Microsemi Co... 24.63 $ 1000 DIODE ZENER 36V 1.5W DO41...
JANTXV1N3042CUR-1 Microsemi Co... 27.53 $ 1000 DIODE ZENER 82V 1W DO213A...
JANTX1N3016DUR-1 Microsemi Co... 28.23 $ 1000 DIODE ZENER 6.8V 1W DO213...
JANTX1N3041DUR-1 Microsemi Co... 28.23 $ 1000 DIODE ZENER 75V 1W DO213A...
JANTX1N935BUR-1 Microsemi Co... 0.0 $ 1000 DIODE ZENER 9.45V 500MW D...
JANTX1N4974D Microsemi Co... 0.0 $ 1000 DIODE ZENER 47V 5W E AXIA...
JANTX1N1204AR Microsemi Co... 0.0 $ 1000 DIODE GEN PURP 400V 12A D...
JANTXV1N4246 Semtech Corp... 6.22 $ 1000 D MET 1A STD 400V
JANTXV1N6167AUS Semtech Corp... 17.25 $ 1000 T DAP BI 1500W SM
Latest Products
IRFL31N20D

MOSFET N-CH 200V 31A D2PAKN-Channel 200V...

IRFL31N20D Allicdata Electronics
IXTT440N055T2

MOSFET N-CH 55V 440A TO-268N-Channel 55V...

IXTT440N055T2 Allicdata Electronics
IXTH14N80

MOSFET N-CH 800V 14A TO-247N-Channel 800...

IXTH14N80 Allicdata Electronics
IXFT23N60Q

MOSFET N-CH 600V 23A TO-268(D3)N-Channel...

IXFT23N60Q Allicdata Electronics
IXTT72N20

MOSFET N-CH 200V 72A TO-268N-Channel 200...

IXTT72N20 Allicdata Electronics
IXFT9N80Q

MOSFET N-CH 800V 9A TO-268N-Channel 800V...

IXFT9N80Q Allicdata Electronics