Allicdata Part #: | JANTXV2N7334-ND |
Manufacturer Part#: |
JANTXV2N7334 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microsemi Corporation |
Short Description: | MOSFET 4N-CH 100V 1A MO-036AB |
More Detail: | Mosfet Array 4 N-Channel 100V 1A 1.4W Through Hole... |
DataSheet: | JANTXV2N7334 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | Military, MIL-PRF-19500/597 |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | 4 N-Channel |
FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 1A |
Rds On (Max) @ Id, Vgs: | 700 mOhm @ 600mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 60nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 1.4W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | 14-DIP (0.300", 7.62mm) |
Supplier Device Package: | MO-036AB |
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The JANTXV2N7334 is a FET array (field effect transistor) intended mainly for use in power electronics and high power management applications. Its low thermal resistance, low on-state resistance, and low total gate charge make it particularly suited for power management applications in power supplies and in DC-to-DC converters. The transistor array features high-current capability, high switching performance, low noise, and low power consumption.
In operation, the JANTXV2N7334 works by creating an electric field in order to regulate the flow of current in the form of electrons, or holes, between the source and drain of the transistor. The electric field is created and manipulated by a voltage applied to the gate of the transistor. This then changes the conductivity of the channel, allowing current to flow or stopping it.
Because of the nature of the field effects involved, the JANTXV2N7334 has very low power consumption when operating, making it particularly suited for use in power-managed applications. Additionally, its low on-state resistance allows it to operate efficiently and offer a high degree of control over current flow. For this reason, it is often used in applications such as power management, DC-to-DC converter control, and high-power switching.
The JANTXV2N7334 is also renowned for its very low noise operation. This is because the principal characteristic that allows for lownoise operation is the low total gate charge, which is very low compared to other FET arrays. This low gate charge also grants it a fast switching time, meaning it can switch and regulate current quickly without creating an unwanted noise.
Because of its low power consumption, low on-state resistance, and low noise operation, the JANTXV2N7334 is particularly suited to power-managed applications, especially DC-to-DC converters. Additionally, its fast switching speed allows it to regulate the flow of current quickly and efficiently, making it an ideal choice for high-current applications and power management. This makes the JANTXV2N7334 an essential component in any power-managed system.
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