KSA1174FBU Allicdata Electronics
Allicdata Part #:

KSA1174FBU-ND

Manufacturer Part#:

KSA1174FBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS PNP 120V 0.05A TO-92S
More Detail: Bipolar (BJT) Transistor PNP 120V 50mA 100MHz 300m...
DataSheet: KSA1174FBU datasheetKSA1174FBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: PNP
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 120V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Power - Max: 300mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Base Part Number: KSA1174
Description

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The KSA1174FBU, classified as a single bipolar junction transistor (BJT), is an important type of transistor that is often used in integrated circuits. This transistor is widely used in a variety of applications, such as amplifiers, oscillators, power circuits, and control circuits. It usually comes in an 8-pin mini-flat package, providing it with improved thermal conductivity, better protection from reverse polarity, and improved mounting strength. Additionally, the KSA1174FBU offers high reliability due to its low collector-to-emitter and base-to-emitter saturation voltage values.

The working principle of a transistor is quite straightforward. When an electrical signal is sent through the base terminal, it is amplified through the emitter and collector. This is due to the behavior of the transistor, which can either act as an amplifier or as a switch. As an amplifier, the transistor increases the strength of the signal, while as a switch, it can either turn a circuit on or off, depending on the base current.

In terms of its applications, the KSA1174FBU can be used for signal processing, audio and video production, telecommunications, data transmission, mobile signal switching, and power control. Its low voltage drift and excellent thermal stability make it desirable for use in high-speed applications. It is also suitable for use in high-capacity systems, such as those used in medical equipment, industrial controllers, and audio/visual systems. Furthermore, the KSA1174FBU is ideal for use in high-voltage, low-power applications, such as those used in automotive applications.

In terms of its features and benefits, the KSA1174FBU is highly efficient, as it has a low VCE(sat) value, making it suitable for high frequency applications. In addition, its high-current gain allows it to support loads up to 2A and switching speeds up to 10MHz. It also has a high Zener breakdown voltage, allowing it to be used in high-voltage applications. The KSA1174FBU also has a low Collector-Emitter Saturation Voltage, which allows it to be used in DC-DC converters for improved efficiency. Additionally, its low collector-emitter leakage current makes it suitable for use in low-noise circuits.

In conclusion, the KSA1174FBU is a single bipolar junction transistor that offers a wide range of features and benefits, such as its efficient high-current gain, low VCE(sat) value, high Zener breakdown voltage, and low collector-emitter leakage current. All these features make it ideal for use in a variety of applications, such as amplifiers, oscillators, power circuits, data transmission, and control circuits.

The specific data is subject to PDF, and the above content is for reference

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