| Allicdata Part #: | KSC2001GTA-ND |
| Manufacturer Part#: |
KSC2001GTA |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | ON Semiconductor |
| Short Description: | TRANS NPN 25V 0.7A TO-92 |
| More Detail: | Bipolar (BJT) Transistor NPN 25V 700mA 170MHz 600m... |
| DataSheet: |  KSC2001GTA Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Box (TB) |
| Part Status: | Obsolete |
| Transistor Type: | NPN |
| Current - Collector (Ic) (Max): | 700mA |
| Voltage - Collector Emitter Breakdown (Max): | 25V |
| Vce Saturation (Max) @ Ib, Ic: | 600mV @ 70mA, 700mA |
| Current - Collector Cutoff (Max): | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 100mA, 1V |
| Power - Max: | 600mW |
| Frequency - Transition: | 170MHz |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package: | TO-92-3 |
| Base Part Number: | KSC2001 |
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The KSC2001GTA is an NPN type silicon transistor designed for amplification and switching applications. It is one of the most popular transistors in the market today and is widely used in a variety of applications, from audio amplifiers to power supply circuits and other amplifying circuits. The KSC2001GTA has a variety of features that make it uniquely suited for amplification and switching applications.
The KSC2001GTA is a single bipolar junction transistor (BJT). A single BJT is made up of three layers: an emitter, a base and a collector. The emitter is the central layer and is connected to the input voltage. The base is the middle layer and is isolated from the emitter. The collector is the outermost layer and is connected to the output voltage. The BJT works by allowing the current to flow through the transistor when the input voltage is larger than the base-emitter voltage threshold. When the current flows through the transistor, the collector-emitter voltage is generated.
The KSC2001GTA features a low on-resistance which is ideal for switching applications. This low on-resistance allows for more efficient energy transfer through the transistor and thus increases the circuit’s overall performance. The KSC2001GTA also features a low saturation voltage which helps to minimize the risk of circuit malfunction due to excessive voltage. In addition, the KSC2001GTA has a high breakdown voltage which helps ensure the maximum reliability of the circuit.
The KSC2001GTA is an attractive option for amplification and switching applications because it is relatively inexpensive, has a wide range of features and its properties make it able to withstand high temperatures and significant voltage variations. It is a reliable, affordable and efficient transistor choice that is suitable for many electronic applications.
The specific data is subject to PDF, and the above content is for reference
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