KSC2001OBU Allicdata Electronics
Allicdata Part #:

KSC2001OBU-ND

Manufacturer Part#:

KSC2001OBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 25V 0.7A TO-92
More Detail: Bipolar (BJT) Transistor NPN 25V 700mA 170MHz 600m...
DataSheet: KSC2001OBU datasheetKSC2001OBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 700mA
Voltage - Collector Emitter Breakdown (Max): 25V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 70mA, 700mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 100mA, 1V
Power - Max: 600mW
Frequency - Transition: 170MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3
Base Part Number: KSC2001
Description

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KSC2001OBU is an uncommonly high-performance transistor, with excellent high- and low-frequency performance compared with other devices. It is a NPN Planar Silicon BJT device and is general-purpose, versatile and cost-effective making it ideal for many applications. The NPN devices can be used anywhere NPN transistors are desired and are ideal for switching, amplification and both basic and complex stages that involve large current flows.

KSC2001OBU transistors are designed to have a higher breakdown voltage than most other transistors and to have a good gain-bandwidth ratio over a wide range of frequencies. This component offers highly reliable operation and extremely low noise. It also has increased dynamic range and all factors considered, offers exceptional overall performance.

To understand how KSC2001OBU works, it is important to understand the basic working principles of bipolar transistors. Bipolar junction transistors (BJT) are three-terminal semiconductor devices in which current is amplified from the input or base terminal to the output or collector terminal. This amplification occurs because the current gains in bipolar transistors are much higher than those of normal two-terminal diodes. Furthermore, this amplitude gain is strongly linked to the input current.

KSC2001OBU is capable of providing very high gain over a wide frequency range, while consuming minimal power. The device is a type of NPN with high current gains and high voltage ratings. It also demonstrates very low noise performance. Therefore, this transistors makes an ideal choice for high fidelity audio amplifier applications and in other applications that require safe switching and high current gain. The device is also highly reliable and cost-effective.

The KSC2001OBU has a wide array of application fields. It can be used for switching applications, amplifier and complex stages. The device is a highly reliable device and operates at extremely low noise. Furthermore, the KSC2001OBU can be used for high-frequency applications such as radio frequency (RF) amplifiers and oscillators. This device is also suitable for low-frequency applications like current sources, voltage regulators and power supplies.

In conclusion, KSC2001OBU is a bipolar junction transistors that demonstrates very good high- and low-frequency performance. It offers very high current gains and very low noise performance. The device is also highly reliable and cost-effective, making it ideal for many applications including switching applications, amplifier and complex stages, high-frequency applications, and low-frequency applications. Therefore, the KSC2001OBU is an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference

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