Allicdata Part #: | KSC2688OS-ND |
Manufacturer Part#: |
KSC2688OS |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 300V 0.2A TO-126 |
More Detail: | Bipolar (BJT) Transistor NPN 300V 200mA 80MHz 1.25... |
DataSheet: | KSC2688OS Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 200mA |
Voltage - Collector Emitter Breakdown (Max): | 300V |
Vce Saturation (Max) @ Ib, Ic: | 1.5V @ 5mA, 50mA |
Current - Collector Cutoff (Max): | 100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 60 @ 10mA, 10V |
Power - Max: | 1.25W |
Frequency - Transition: | 80MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-225AA, TO-126-3 |
Supplier Device Package: | TO-126 |
Base Part Number: | KSC2688 |
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KSC2688OS Application Field and Working Principle
The KSC2688OS is a type of Bipolar (BJT) Single Transistor that specializes in the application of electronic power control, typically for industrial and commercial applications. This versatile device is very popular for a wide array of applications, such as turning off power to electric motors, heating elements, and lamps. It is also able to deliver both high-current and high-voltage, allowing it to be used in a variety of applications in the industrial and commercial sectors.
The device has a number of features that make it a popular choice for many power control applications. Firstly, it has an insulated gate-bipolar transistor (IGBT) structure, meaning that it is able to switch both high-current (hundreds or thousands of Amperes) and high-voltage (hundreds or thousands of Volts) rapidly and efficiently. This means that the KSC2688OS can provide greater accuracy in power control, as well as higher energy efficiency. Secondly, it has an integrated driver circuit, enabling the KSC2688OS to be used in optically isolated applications, providing an isolation barrier between the switching point and the downstream circuitry.
In terms of its working principle, KSC2688OS is a metal-oxide-semiconductor field-effect transistor (MOSFET) based device. Its main function is to provide switching of power between two connections, referred to as the source and the drain, depending on the input voltage. It works by passing a controlled current between the source and the drain. When the voltage passing through the gate exceeds a certain threshold voltage, the current passing between the source and drain is increased, which in turn switches on the output circuit.
The integrated gate conductor of the KSC2688OS ensures accurate controlling of the current. This is due to the fact that it works by means of p-channel MOSFETS, which are responsible for increasing current quickly and accurately. It is also able to act as an inverter, meaning that it can switch on and off the output current rapidly and accurately, even if the input is fluctuating or reversed in polarity. This makes it an incredibly versatile device for a wide range of applications.
In summary, the KSC2688OS is a popular Bipolar (BJT) Single Transistor that specializes in the application of electronic power control. It has an insulated gate-bipolar transistor (IGBT) structure, allowing it to deliver both high-current and high-voltage power switching efficiently. It has an integrated driver circuit, meaning that it provides accurate control with no optical isolation, and it works using p-channel MOSFETs. This makes it a highly versatile transistor, suitable for a wide range of applications in both industrial and commercial settings.
The specific data is subject to PDF, and the above content is for reference
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