KSC2669OBU Allicdata Electronics
Allicdata Part #:

KSC2669OBU-ND

Manufacturer Part#:

KSC2669OBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 30V 0.03A TO-92S
More Detail: Bipolar (BJT) Transistor NPN 30V 30mA 250MHz 200mW...
DataSheet: KSC2669OBU datasheetKSC2669OBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 12V
Power - Max: 200mW
Frequency - Transition: 250MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Description

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Introduction

KSC2669OBU is a single-Bipolar Junction transistor (BJT) of the NPN type device. It is a very common type of transistor that can be used for power switching, amplifying, and gain control. KSC2669OBU is manufactured by Samsung semiconductors and is often used in consumer electronics, computers, and other high-end applications. This article will discuss the application fields and workings of KSC2669OBU.

Application Fields

KSC2669OBU has a wide range of applications due to its capability in operating with a wide range of voltages and currents. It can be used as a signal amplifier, switch, or as an inverter. In consumer electronics, it is often used in audio amplifiers due to its low power consumption and low voltage requirements. It can also be used in the switching of high voltage or current loads and in the amplification of analog signals. In computer applications, it can be used in digital signal processing and in the switching of logic levels. KSC2669OBU is also used in automotive electronics, such as speed controllers and engine control systems.

Working Principle

KSC2669OBU uses the principles of BJT operation. Instead of possessing two separate PN junctions, it contains three, which are connected so as to form a cycling current flow. This current flow is known as base bias current, and can occur when voltage is applied to the base terminal. When the base bias current is established, current will flow between the base and the emitter independent of the source and load. In addition, the transistor is fed by a resistor connected to the base, which will control the current flow between the base and the emitter, depending on the resistance value of the resistor.

When the base voltage exceeds a certain threshold, the transistor will start to conduct a current between the collector and emitter, in the same direction as the base bias current. This current path between the emitter and the collector is known as the active region. The purpose of the active region is to amplify the current flow between the emitter and the collector. This can be used to obtain a large gain in voltage or current when the transistor is used in an amplifying circuit.

Conclusion

KSC2669OBU is a very popular transistor due to its low power consumption, low voltage requirements and wide range of applications. It is often used in consumer electronics, computers, and other high-end applications due to its ability to amplify, switch and invert signals. This article discussed the wide array of applications it can be used for, as well as its working principle. KSC2669OBU is a reliable, cost effective, and versatile BJT.

The specific data is subject to PDF, and the above content is for reference

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