KSC2335R Allicdata Electronics
Allicdata Part #:

KSC2335R-ND

Manufacturer Part#:

KSC2335R

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 7A TO-220
More Detail: Bipolar (BJT) Transistor NPN 400V 7A 1.5W Through...
DataSheet: KSC2335R datasheetKSC2335R Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 7A
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 1V @ 600mA, 3A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Power - Max: 1.5W
Frequency - Transition: --
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Base Part Number: KSC2335
Description

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KSC2335R is a single bipolar junction transistor (BJT), which belongs to the PNP type. It is usually used in pre-amplifiers, audio amplifiers, ultra wideband amplifiers, digital signal processors and power switching circuits. The main application fields are audio frequencies, instrumentations, radio frequency control and aircrafts.

KSC2335R’s active region consists of a PN-junction. This PN-junction allows the transistor to amplify signals. When voltage is applied to the basic region, the electrons move into the PN-junction and the holes move away from the PN-junction. This action is called junction bias. When small signals are applied to the base, the electrons and holes become injected by the PN-junction. The electron and hole injection causes a current to flow between the collector and emitter. This current is called collector-emitter current or collector current and it is proportional to the current in the PN-junction. This is the basic principle of a bipolar junction transistor.

KSC2335R’s main feature is its low noise and low power consumption. The transistor has very low noise levels and high linearity. This is because its PN-junction has very low capacitance and leakage current. As a result, the transistor has excellent noise immunity and can be used in sensitive circuits. Moreover, KSC2335R has a very low power consumption and its power dissipation is only 0.5 Watts.

In addition, KSC2335R has a very wide frequency range, which ranges from 0.1MHz to 4GHz. This makes it suitable for applications which require high frequency signals. The wide frequency range also makes the transistor suitable for modulated signals and ultra wideband applications.

KSC2335R is extremely easy to use and it is one of the most reliable transistors available. The transistor is stable even when operating with high load current and can withstand repeated switching between collector and emitter. Additionally, the power consumption of the transistor is very low and it is able to operate continuously over a wide temperature range.

In conclusion, KSC2335R is an excellent choice for pre-amplifiers, audio amplifiers and power switching circuits. The transistor has excellent noise immunity, low power consumption, wide frequency range and is very easy to use. It is suitable for all applications that require low noise and low power consumption.

The specific data is subject to PDF, and the above content is for reference

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