KSC2310YNBU Allicdata Electronics
Allicdata Part #:

KSC2310YNBU-ND

Manufacturer Part#:

KSC2310YNBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 150V 0.05A TO-92L
More Detail: Bipolar (BJT) Transistor NPN 150V 50mA 100MHz 800m...
DataSheet: KSC2310YNBU datasheetKSC2310YNBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 100MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92-3
Base Part Number: KSC2310
Description

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KSC2310YNBU is a transistor with a single bipolar junction (BJT) that is widely used for many applications. It is designed to provide a large amount of current amplification, making it suitable for a wide range of power amplification applications. In this article, we will discuss the application field and working principle of the KSC2310YNBU transistor.

The KSC2310YNBU is mainly used in high power amplifier stages, such as audio amplifiers and car audio applications. It is also used in low-power switching applications such as computers and portable electronics. In addition, the transistor is also suitable for various security systems, medical instruments, and consumer products.

The working principle of the KSC2310YNBU is fairly straightforward. It is a three-layer semiconductor device with two junctions - the collector and base junction. When current flows through the base, it induces a current into the collector. This current is proportional to the base current, so an increased current at the base will result in an increased current at the collector.

This process works in reverse as well. When a voltage is applied across the collector and the base, a current will be developed from the base to the collector. This is referred to as reverse-bias. The KSC2310YNBU can operate in either mode depending on the application.

The KSC2310YNBU is made up of a few components, including a collector and emitter, a base, and a substrate. The collector-emitter junction of the transistor is made up of a pair of p-doped and n-doped semiconductor materials, while the base is made up of a single layer of p-doped material. This structure is designed to create a voltage gain from the base to the collector.

The transistor is also designed to reduce noise. It achieves this through the use of alloys such as molybdenum, palladium and diamond. These materials are also used for their low thermal resistance to help dissipate heat.

The KSC2310YNBU is a fairly simple device that has been used in many electronics applications. Its combination of reliability and performance has made it a popular choice among many electronics designers. Its ability to handle a wide range of power levels, offer stable operation and reduce noise make it an ideal choice for many applications.

The specific data is subject to PDF, and the above content is for reference

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