KSC2330ASHBU Allicdata Electronics
Allicdata Part #:

KSC2330ASHBU-ND

Manufacturer Part#:

KSC2330ASHBU

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 400V 0.1A TO-92L
More Detail: Bipolar (BJT) Transistor NPN 400V 100mA 50MHz 1W T...
DataSheet: KSC2330ASHBU datasheetKSC2330ASHBU Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 400V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92-3
Base Part Number: KSC2330
Description

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The KSC2330ASHBU is a single bipolar transistor (BJT) device made by Panasonic. It is a NPN transistor with a current gain range of 75 to 125 at a collector current of 500 mA. The KSC2330ASHBU has a collector-emitter voltage (VCEO) of 40 V, a collector-base voltage (VCBO) of 45 V, an emitter-base voltage (VEBO) of 5.0 V, and an operating temperature range of -55°C to 150°C.

The KSC2330ASHBU is primarily used in analog and power switching applications, such as audio amplifiers, motor speed controls, and switch mode power supplies. It is also suitable for low frequency switching applications, as well as high speed switching applications. Due to its high gain and rugged construction, it can be used in applications where load and noise margins are critical.

The KSC2330ASHBU utilizes an epitaxial base structure to reduce internal base resistance and improve switching speed. The device is capable of switching a current of up to 500 mA at a speed of up to 100 kHz. It also features an integrated base-collector capacitance and a built-in resistor for slowing the change in current when switching from one state to another.

The working principle of the KSC2330ASHBU is based on the basic BJT structure: a base, collector, and emitter. When a small current is applied to the base (BE) of the transistor, it increases the current gain, allowing a larger current to flow through the collector-emitter (CE) junction. This larger current can then be used to control a larger current, allowing the transistor to act as a switch.

The KSC2330ASHBU also utilizes its base-collector capacitance to filter out high frequency noise, allowing the transistor to function in higher frequency switching applications. Additionally, the built-in resistor slows the change in current when switching between one state to the other.

The KSC2330ASHBU is a versatile device that is widely used in analog and power switching applications. Its high current gain and rugged construction make it a reliable and efficient transistor for many different applications.

The specific data is subject to PDF, and the above content is for reference

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