KSC2757OMTF

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	15V
Frequency - Transition:	1.1GHz
Noise Figure (dB Typ @ f):	--
Gain:	--
Power - Max:	150mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	90 @ 5mA, 10V
Current - Collector (Ic) (Max):	50mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	SOT-23-3 (TO-236)

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KSC2757OMTF Application Field and Working Principles

The KSC2757OMTF is a bipolar junction transistor (BJT) developed by Panasonic for use in radio frequency (RF) applications. It is notable for its low noise level, low frequency noise suppression, and high gain. The device is useful for amplifying baseband signals such as those used in radio receivers and telecommunications equipment. The KSC2757OMTF offers excellent performance when operated in the 1-3GHz frequency range. It has a high breakdown voltage rating, making it suitable for use in areas with high voltage signals. It also has a low input offset voltage, allowing it to be used with low noise designs. Its low noise figure, low frequency noise suppression, and high gain make it highly efficient in amplifying low frequency signals without introducing too much parasitic noise. The KSC2757OMTF is an NPN transistor designed for use in RF amplifiers and mixers. Its low noise design allows it to provide high gain with minimal added noise. It has a good frequency response, which makes it suitable for use in applications with dynamic frequency ranges. It also has excellent linearity, making it suited for use in linear amplifiers. The KSC2757OMTF transistor consists of an emitter, collector, and base, connected together to form the electrical components of the device. The base region serves as the control input, and when current is supplied to the base terminal, it triggers the flow of current in the emitter-collector region. This current flow is used to amplify the signal and increase the output power of the transistor. The KSC2757OMTF transistor has an exceptionally low noise figure, making it the ideal device for high-gain amplifiers. It maintains a high dielectric isolation between the emitter and collector, which results in improved signal integrity. The device also has a high reduction of thermal noise, which reduces the effects of thermal roll off in the gain of amplifiers and decreases distortion. The KSC2757OMTF is also known for its low frequency noise suppression, which is useful in applications such as cellular telephones, walkie-talkies, and wireless data links. This transistor also exhibits low distortion, making it suitable for audio applications and high-quality video signals. Overall, the KSC2757OMTF is an excellent option for RF applications, providing high gain, low noise, and improved linearity and signal response. It can be used in a variety of applications and offers excellent performance over a wide range of frequencies. The device is also relatively affordable and easy to use.

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