Allicdata Part #: | KSC2073H1TU-ND |
Manufacturer Part#: |
KSC2073H1TU |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | TRANS NPN 150V 1.5A TO-220 |
More Detail: | Bipolar (BJT) Transistor NPN 150V 1.5A 4MHz 25W Th... |
DataSheet: | KSC2073H1TU Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Transistor Type: | NPN |
Current - Collector (Ic) (Max): | 1.5A |
Voltage - Collector Emitter Breakdown (Max): | 150V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 50mA, 500mA |
Current - Collector Cutoff (Max): | 10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 40 @ 500mA, 10V |
Power - Max: | 25W |
Frequency - Transition: | 4MHz |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Package / Case: | TO-220-3 |
Supplier Device Package: | TO-220-3 |
Base Part Number: | KSC2073 |
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KSC2073H1TU transistors are single bipolar junction transistors (BJT\'s) which are widely utilized in various applications. They are capable of amplifying current, voltage, or both and have low noise characteristics. BJT\'s have the advantage of being able to achieve high current gain with low power input and are widely used in linear amplifier stages.
The KSC2073H1TU is a PNP transistor with a maximum collector-emitter voltage of 15V, a peak collector current of 0.15A, and a maximum power dissipation of 500mW. It has a wide bandwidth, low junction capacitance, and excellent variation in beta over temperature, making it ideal for high frequency use.
The working principle of the KSC2073H1TU is based on the principle of charged particle transfer. It consists of three terminals: the base, collector, and emitter. The base is the control terminal, and when a forward biasing voltage is applied to it, electrons are attracted to the collector-emitter junction. This generates an amplified current from the collector to the emitter.
KSC2073H1TU transistors are commonly used in applications such as radio frequency (RF) amplifiers, linear amplifiers, and switch control circuits. Due to its low junction capacitance, the KSC2073H1TU is suitable for use at higher frequencies, making it a good choice for use in RF amplifiers. The low power dissipation capabilities make the KSC2073H1TU an ideal choice for use in low power circuit designs.
The KSC2073H1TU is also used in linear and switch control circuits, where it is used to switch and/or amplify signals. Due to its high current gain, it can easily control a high current load with a minimal amount of base current. This makes it perfect for applications where high currents and/or voltage levels need to be switched or amplified.
KSC2073H1TU transistors are extremely versatile and can be used in a variety of applications. They are capable of switching or amplifying a wide range of current or voltage levels, making them suitable for a wide variety of applications. They are usually small, inexpensive, and can be used in a wide range of circuits.
The specific data is subject to PDF, and the above content is for reference
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