KSC2330OTA Allicdata Electronics
Allicdata Part #:

KSC2330OTATB-ND

Manufacturer Part#:

KSC2330OTA

Price: $ 0.06
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 300V 0.1A TO-92L
More Detail: Bipolar (BJT) Transistor NPN 300V 100mA 50MHz 1W T...
DataSheet: KSC2330OTA datasheetKSC2330OTA Datasheet/PDF
Quantity: 8000
1 +: $ 0.06000
10 +: $ 0.05820
100 +: $ 0.05700
1000 +: $ 0.05580
10000 +: $ 0.05400
Stock 8000Can Ship Immediately
$ 0.06
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 300V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 10V
Power - Max: 1W
Frequency - Transition: 50MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSC2330
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The KSC2330OTA is a single bipolar transistor and is used in a variety of application fields. It is widely used in RF (radio frequency) and audio power amplifiers, switching circuits, logic circuits and other small-signal amplifier and driver applications. It is also widely used in low-frequency power applications and general-purpose switching.

The transistor is composed of three layers of semiconductor material, N-type on one side and P-type on the other, with a third layer of N-type material in the middle. The transistor works by having a voltage applied to the base region, which controls the current flow between the emitter-collector and allows the transistor to act as an electronic switch.

A KSC2330OTA has an operating temperature range of -40°C to +150°C, a breakdown voltage of 200V, a Collector-Emitter saturation voltage of 250mV at Ic=5mA and a Collector-Base breakdown voltage of 450V at Ib=1µA. It has a hFE (current gain) range of 150-360 and an IC (current) limit of 8A, making it suitable for a wide range of application fields.

The KSC2330OTA is a popular choice for RF and audio power applications. Its internal architecture provides excellent power gain and can support low-voltage drop across its elements. This makes it ideal for applications such as cell phone amplifiers, wireless modules and other audio power applications. The KSC2330OTA is also used in switching applications, such as the switching of relays or contactors. It is ideal for this type of application due to its low cost, low power requirements and its ability to handle upto 8 amps of current. It is also used in logic circuits due to its excellent logic switch characteristics.

The KSC2330OTA is one of the most popular single bipolar transistors and is used in a wide range of application fields. It is robust, reliable and cost-effective, making it an ideal choice for many applications. Its excellent power gain, low voltage drop across its elements and ability to handle upto 8 amps of current make it useful for RF and audio power applications, switching applications and logic circuits.

The specific data is subject to PDF, and the above content is for reference

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