KSC2786YTA Allicdata Electronics
Allicdata Part #:

KSC2786YTA-ND

Manufacturer Part#:

KSC2786YTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR NPN 20V 20MA TO-92S
More Detail: RF Transistor NPN 20V 20mA 600MHz 250mW Through Ho...
DataSheet: KSC2786YTA datasheetKSC2786YTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 600MHz
Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
Gain: 18dB ~ 22dB
Power - Max: 250mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector (Ic) (Max): 20mA
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Supplier Device Package: TO-92S
Base Part Number: KSC2786
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

KSC2786YTA transistors are an important element in the family of bipolar (BJT) RF transistors. These devices are used in a variety applications, from consumer electronics and computing devices to commercial products and military applications. They are widely used in the fields of communications, data processing, automation and scientific research.

KSC2786YTA is an RF transistor designed for use in high-frequency applications. It has high breakdown voltage and fast switching performance, which make it ideal for use in RF power amplifiers, RF detectors, RF filter circuits and RF power switches. It also provides operation with high efficiency and low power dissipation.

The KSC2786YTA is a lateral NPN bipolar transistor (BJT) constructed using Si-Epitaxial Planar technology. It has a collector-emitter breakdown voltage of 100V and a high current transfer ratio of 600mV. It also has a maximum power dissipation rating of 200mW. The transistor is designed for high frequency operation, up to 1GHz, with a gain (fp) of 20dB at 1GHz.

The working principle of the KSC2786YTA involves the injection of electrons into the collector region of the transistor, which results in a current through the transistor. This current is controlled by the voltage applied to the base-emitter junction of the transistor. As the voltage to the base-emitter junction increases, the current through the transistor also increases. This increase in current generates a voltage drop across the collector-emitter junction, which is known as the collector-emitter voltage. This voltage is the voltage at which the device can be switched off. The value of the collector-emitter voltage can vary depending on the frequency of the signal being applied to the base-emitter junction.

The KSC2786YTA has a wide range of applications in electronic equipment. It can be used in high-frequency audio amplifiers, communication transmitters and receivers, for signal detection and filtering, and for switching power supplies and battery back-up. It can also be used for high speed analog and digital circuits.

KSC2786YTA transistors are a great way to build reliable, high-performance RF systems. They are reliable and easy to use, making them an ideal choice for RF system designers. Additionally, they are relatively inexpensive which makes them an economical solution for system designers looking for a cost-effective option.

The specific data is subject to PDF, and the above content is for reference

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