KSC2258ASTU

Series:	--
Packaging:	Tube
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	300V
Vce Saturation (Max) @ Ib, Ic:	1.2V @ 5mA, 50mA
Current - Collector Cutoff (Max):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	40 @ 40mA, 20V
Power - Max:	4W
Frequency - Transition:	100MHz
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-225AA, TO-126-3
Supplier Device Package:	TO-126-3

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Transistors - Bipolar (BJT) - Single

The KSC2258ASTU is a single-mode NPN transistor designed to handle high power density and high energy density, enabling higher levels of performance. The transistor is capable of operating at extreme temperatures and a wide range of load conditions, from inductive to capacitive. This makes the KSC2258ASTU ideal for a variety of application fields, such as automotive, industrial and communications.

Features

The KSC2258ASTU features a wide range of advantages, making it an excellent choice for application fields that require high power density and high temperature operation. The transistor is also ultra-fast and capable of operating at extreme temperatures, making it ideal for applications that require pulsed mode switching or high-voltage operation. The transistor has minimal variability between base-emitter voltage, collector-base current and gain, making it suitable for applications that require precise, repeatable performance. In addition, the transistor has excellent immunity to overload and high robustness, making it suitable for use in difficult conditions.

Application fields

The KSC2258ASTU is suitable for a variety of application fields. In the automotive industry, it can be used to manage power supply systems, control switched operations and provide thermal protection. In the industrial sector, the transistor can be used in industrial controllers, cooling and heating systems, power supplies and automation systems. In the communications sector, the transistor can be used in radio frequency switches, base station systems and industrial communication systems.

Working principle

The KSC2258ASTU operates on the principle of a bipolar junction transistor (BJT). A BJT is a three-terminal semiconductor device that consists of two p-n junctions in series with each other, sharing a common base. The base-emitter junction is forward biased, allowing electrons to flow from the emitter to the base. The base-collector junction is reverse biased, allowing for the flow of holes from the collector to the base. The current flows between the collector and emitter, depending on the current in the base. The current in the base is controlled by the applied voltage, allowing for either an increase or decrease in the current flow between the collector and emitter. In this way, BJT transistors are able to amplify signals, making them ideal for a variety of applications.

Conclusion

The KSC2258ASTU is a single-mode NPN transistor designed to handle high power density and high energy density, enabling higher levels of performance. The transistor is capable of operating at extreme temperatures and a wide range of load conditions, from inductive to capacitive. This makes the KSC2258ASTU suitable for a variety of application fields, such as automotive, industrial and communications. The KSC2258ASTU operates on the principle of a bipolar junction transistor (BJT), in which the current in the base is controlled by the applied voltage. This makes it possible to amplify signals, making them ideal for a variety of applications.

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