KSC2500DTA Allicdata Electronics
Allicdata Part #:

KSC2500DTA-ND

Manufacturer Part#:

KSC2500DTA

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANS NPN 10V 2A TO-92L
More Detail: Bipolar (BJT) Transistor NPN 10V 2A 150MHz 900mW T...
DataSheet: KSC2500DTA datasheetKSC2500DTA Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 10V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 500mA, 1V
Power - Max: 900mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Supplier Device Package: TO-92-3
Base Part Number: KSC2500
Description

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Transistors, whether bipolar, FET, or MOSFET, are among the most integral components in any electronic system. The KSC2500DTA is a type of single transistor that offers an excellent combination of features for a wide array of applications. Beyond its compact size and excellent performance, this transistor has a wide range of applications, from low-noise amplifiers to high-speed switching and pulse applications. This article will discuss the application field and working principle of the KSC2500DTA.

The KSC2500DTA is a low-power, low-cost NPN silicon transistor. It has a high voltage collector-emitter breakdown voltage (BVCE), excellent current gain, and low saturation voltage. The transistor also has high gain-bandwidth product and low leakage current, making it ideal for use in amplifiers, switches, and other low-noise applications. The KSC2500DTA is well-suited for use in small signal and power electronics applications.

The KSC2500DTA has a number of features that make it an ideal choice for use in signal processing, motor control, and other low-power applications. Firstly, it has low signal-to-noise ratio and low distortion. This makes it good for audio pre-amplification and low-noise applications. Secondly, it has high-frequency response and fast switching, making it suitable for high-speed applications. Finally, it has low thresholds and is capable of driving large capacitive loads, making it suitable for use in power electronics applications.

The operating principle of a transistor is relatively simple. When a small current is applied to the base, it causes electrons to flow between the emitter and the collector. In an NPN transistor, when the base current is positive, the electrons will flow from the emitter to the collector, creating what is known as a collector current. If the base current is then reversed, then the collector current will be reversed as well. This is how the transistor can be used to control current and voltage in a circuit. The KSC2500DTA operates according to the same principle.

The KSC2500DTA is designed to be used in applications where low-noise, high-speed switching and pulse applications are required. It is also good for amplification in audio pre-amplification applications and for driving large capacitive loads. In addition, its low current consumption, excellent current gain, and low saturation voltage make it suitable for a wide range of power electronics applications. Thus, the KSC2500DTA is an excellent choice for use in a variety of applications.

In conclusion, the KSC2500DTA is an excellent transistorexcellentand performance, low-noise, and power consumption. It is well-suited for use in a variety of applications that require low-noise amplification, high-speed switching and pulse applications, and power electronics. The operating principle of this transistor is simple, and its features make it an ideal choice for circuit designers who need a reliable and efficient transistor for their projects.

The specific data is subject to PDF, and the above content is for reference

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