KSC3123RMTF Allicdata Electronics
Allicdata Part #:

KSC3123RMTF-ND

Manufacturer Part#:

KSC3123RMTF

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: TRANSISTOR NPN 20V 50MA SOT-23
More Detail: RF Transistor NPN 20V 50mA 1.4GHz 150mW Surface Mo...
DataSheet: KSC3123RMTF datasheetKSC3123RMTF Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 20V
Frequency - Transition: 1.4GHz
Noise Figure (dB Typ @ f): 3.8dB ~ 5.5dB @ 200MHz
Gain: 20dB ~ 23dB
Power - Max: 150mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector (Ic) (Max): 50mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3 (TO-236)
Description

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KSC3123RMTF Application Field and Working Principle

KSC3123RMTF transistors, also known as Bipolar Junction Transistors (BJT) RF, can be used for a variety of applications. They are used in radios, televisions, digital radios and other devices that require high frequency and low noise operation. They can also be used for low current amplification and switching applications due to its high voltage handling capability.

Application Fields

KSC3123RMTF Transistors are used in many different types of applications. These include TV and radio receivers, RF amplifiers, microphones, and many other types of electronic devices. The transistors also provide a very low noise performance as well as a wide frequency range. The transistors are also very reliable and can provide a long-lasting service.

In addition to the applications discussed above, KSC3123RMTF transistors can also be used in the detection of signals at very high frequencies. They have the ability to detect signals up to 50 GHz and are preferred for object detection, communication and navigation devices. These transistors are used in military applications and space exploration to detect signals from very far away distances.

Working Principle

A KSC3123RMTF transistor is a four-terminal active component made up of two layers of semiconductor material. Each layer consists of an N-type and a P-type semiconductor that is sandwiched together. A small electric current passes through the N-type material, creating electron-holes. The electric current is amplified when the electrons and holes drift to opposite sides of the semiconductor layers, creating a voltage-gain circuit.

KSC3123RMTF transistors have a wide frequency range and a high gain-bandwidth product, making them ideal for high frequency applications. They are also able to operate at high frequencies without producing excessive noise. This makes them ideal for applications such as radio communication.

The transistors are also capable of delivering high current output and can be used in applications that require very high voltage handling capabilities. This includes applications such as computer power supplies and DC-AC inverters.

Conclusion

KSC3123RMTF transistors are widely used for a variety of applications. They are widely available in a variety of form factors and a wide range of operating voltages and frequencies. They feature low noise performance, long-lasting reliability, and high efficiency and are perfect for applications such as radios, televisions, digital radios, and object detection devices.

The specific data is subject to PDF, and the above content is for reference

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