LE25CB643TT-TLM-E

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Memory is an important component in any digital device. From tiny module of RAM to a large storage devices, memory works as the vital factor which allows a digital system to function effectively and efficiently. The type of memory and memory architecture varies from system to system. LE25CB643TT-TLM-E is one such type of memory technology which is used in various applications. Let us discuss more about its application field and working principle.

The LE25CB643TT-TLM-E memory is a low-power, high-density, ultra-fast, low-voltage Static Random Access Memory (SDRAM). It is manufactured by Silterra which provides the device with high-speed, low-power and reliable features. This device can operate with wide temperature range and can be powered through a wide voltage range. It provides very good EMI, EMC and power isolation features. The LE25CB643TT-TLM-E device is used in a broad range of applications including industrial, automotive, consumer, communication, networking and other embedded systems.

The LE25CB643TT-TLM-E memory device is based on a 8-bit wide, asynchronous, non-burst bus architecture. It supports three address lines and two chip select lines, one for reading and the other for writing. When a write cycle is initiated, data is written to the memory location indicated by the three address lines. When a read cycle is initiated, data is read from the memory location indicated by the three address lines.

The device also has a feature called a DQS strobe. This strobe allows data to be written and read from the memory location simultaneously. The DQS strobe is triggered by the rising edge of the data strobe, indicating the arrival of the data to be stored. The data stored is then read back by the falling edge of the data strobe. This allows the LE25CB643TT-TLM-E memory device to operate at high speeds with very low power.

The device also features an Automatic Refresh Modes feature. This feature allows the device to perform a refresh process automatically without the need for external refresh signal. This feature helps to reduce the power consumption of the system, as less energy is required for refreshing the memory. Furthermore, it reduces system latency as the refresh process is done by the internal logic of the device, thus saving clock resources.

The LE25CB643TT-TLM-E memory device also has an advanced on-chip ECC feature. This feature helps to provide improved performance and reliability by correcting single bit errors. This feature also helps to reduce the overall power consumption of the system. Moreover, multiple copies of each piece of data can be stored to provide additional data protection.

In addition, the device features an Advanced command pro-gramming feature. This feature allows the user to program the device with the help of an external command bus. The external command bus can be used to issue commands such as read and write requests from the host device. This feature helps to reduce the host interface latency and improve overall system performance.

To sum up, the LE25CB643TT-TLM-E memory device is an advanced and reliable memory technology used for various applications. It is manufactured by Silterra and is based on a 8-bit wide, asynchronous, non-burst bus architecture. The device features advanced features such as on-chip ECC for data error correction, advanced command programming, and an automatic refresh mode for reducing power consumption. The device is a low-power, high-density, ultra-fast, low-voltage Static Random Access Memory (SDRAM) and is optimal for use in industrial, automotive, consumer, communication, networking and other embedded systems.

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