LE25W81QES00-AH-1

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH
Memory Size:	8Mb (1M x 8)
Clock Frequency:	30MHz
Write Cycle Time - Word, Page:	1ms
Memory Interface:	SPI
Voltage - Supply:	2.45 V ~ 3.6 V
Operating Temperature:	-20°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	8-WDFN Exposed Pad
Supplier Device Package:	8-VDFN/VSONT (6x5)

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LE25W81QES00-AH-1 Memory Application Field and Working Principle

The LE25W81QES00-AH-1 Memory is an advanced integrated storage device that functions as both a volatile and a non-volatile type of memory. It is designed for use in a variety of application fields such as automotive, medical, consumer electronics, and embedded systems. This article will discuss the application fields for the LE25W81QES00-AH-1, as well as the basic working principle.

Application Fields

The LE25W81QES00-AH-1 Memory is a robust and high-performance integrated storage device that can be used in a variety of application fields. It is an ideal solution for automotive applications due to its low power consumption, wide temperature range, and robust hardware-level data protection features. In addition, its advanced error-detection and correction features make it an ideal choice for mission-critical medical and aerospace applications. The LE25W81QES00-AH-1 Memory is also well-suited to consumer electronics, particularly portable devices. It has a low pin count and small form factor, making it ideal for mobile devices. Its high read/write performance makes it capable of handling large amounts of data quickly and efficiently. Finally, the LE25W81QES00-AH-1 Memory is an ideal storage solution for embedded systems, due to its combination of low power consumption and high-speed performance. Its low pin count, small form factor, and on-die error correction make it an ideal choice for critical embedded applications.

Working Principle

The LE25W81QES00-AH-1 Memory operates on the principle of storing digital data in ferroelectric memory cells. Ferroelectric memory cells are electronic components that store binary information in a non-volatile fashion. These cells consist of two layers of a ferroelectric material, which is sandwiched between two electrodes. A voltage is applied across the electrodes, and this causes the ferroelectric material to switch between two distinct states, thus storing either a 1 or 0. When data is written to a ferroelectric memory cell, the voltage applied to the electrodes will cause the cell to switch between a 1 and 0 state. This change in voltage is detected by the memory controller, which reads the data stored in the cell and processes it accordingly. The same process occurs in reverse when data is read from the cell, with the voltage causing the cell to switch between the 1 and 0 states.

Conclusion

In conclusion, the LE25W81QES00-AH-1 Memory is an advanced integrated storage device that is suitable for a variety of application fields. It has a low power consumption, wide temperature range, and robust hardware-level data protection features, making it ideal for automotive, medical, and aerospace applications. Furthermore, its low pin count, small form factor, and high-speed performance make it suitable for consumer electronics and embedded systems. The LE25W81QES00-AH-1 Memory operates on the principle of storing digital data in ferroelectric memory cells, which switch between two distinct states to store either a 1 or 0.

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