Allicdata Part #: | M27C1001-10C6-ND |
Manufacturer Part#: |
M27C1001-10C6 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC EPROM 1M PARALLEL 32PLCC |
More Detail: | EPROM - OTP Memory IC 1Mb (128K x 8) Parallel 100... |
DataSheet: | M27C1001-10C6 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - OTP |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 100ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-LCC (J-Lead) |
Supplier Device Package: | 32-PLCC (11.35x13.89) |
Base Part Number: | M27C1001 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The M27C1001-10C6 memory, or sometimes referred to as the “Flash memory”, is an evolution of the traditional memory in terms of features and usability. It is a type of Non-Volatile memory, which means it will retain its content even after disconnecting its power source. This makes it very useful for usage in many applications since the memory will not be lost after a power failure or shut down.
The M27C1001-10C6 Flash memory is available in the Plastic DIP package, making it very suitable for hand assembly. Its wide working voltage ranges from 4.5V to 5.5V and is resistant to noisy lines. The range of operation temperature can be extended as low as to -55°C and as high as +125°C. It has a considerable cycle endurance capability of 100,000 erase/write cycles per memory block. It also has a low power consumption and high data retention capability up to 100 years.
The M27C1001-10C6 Flash memory can be used for a wide range of digital applications such as servers, telecommunications equipment, industrial and consumer appliances, automotive systems, and embedded applications. Some of the applications where this memory was used includes data storage, data management, data continuity, exception-based reporting and other file system operations.
The working principle of the M27C1001-10C6 Flash memory is based on voltage-based programming. Each memory cell of the memory is fabricated with two transistors. A higher voltage applied to the gate of the transistor will create a conductive path, enabling the storage of data in the form of bits. The higher voltage of 12V is required for writing data into the Flash memory. The other process of reading requires significantly less voltage, which is typically 3.3V. The voltage required to erase the stored data will be higher than programming voltage, around 10V.
As a reliable and cost-effective form of memory, the M27C1001-10C6 Flash memory is increasingly being used in various applications. Its low power consumption, wide-temperature range, long data-retention period, wide voltage range, noise immunity, and cycle endurance make it a reliable choice for many demanding digital applications.
The specific data is subject to PDF, and the above content is for reference
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