Allicdata Part #: | 497-1643-5-ND |
Manufacturer Part#: |
M27C256B-12B1 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | STMicroelectronics |
Short Description: | IC EPROM 256K PARALLEL 28DIP |
More Detail: | EPROM - OTP Memory IC 256Kb (32K x 8) Parallel 12... |
DataSheet: | M27C256B-12B1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tube |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | EPROM |
Technology: | EPROM - OTP |
Memory Size: | 256Kb (32K x 8) |
Write Cycle Time - Word, Page: | -- |
Access Time: | 120ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | 0°C ~ 70°C (TA) |
Mounting Type: | Through Hole |
Package / Case: | 28-DIP (0.600", 15.24mm) |
Supplier Device Package: | 28-PDIP |
Base Part Number: | M27C256B |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a vital part of any technology system, providing the ability to store and retrieve data quickly and reliably. The M27C256B-12B1 is a standard EPROM device that provides a high-density, high-reliability, low-cost solution for electronic memory requirements. It is composed of a 213 x 8 bit array of Flash EEPROM cells and is optimized for applications that demand high performance, reliability, and low-cost.
The M27C256B-12B1 is an ideal choice for a wide range of memory requirements, due to its fast access time and large capacity. The device is designed with a wide range of features, which include a 12-bit address bus, an 8-bit data bus, and a 3-bit status bus. This makes it well suited for applications that require high speed memory access and reliable, accurate data storage.
Applications of the M27C256B-12B1 range from basic data storage needs, such as data warehousing and gaming systems, to advanced memory requirements for industrial and scientific applications. The device is also a viable solution for embedded applications, as it combines a large capacity with a low cost per bit. The device is well suited for use in a variety of applications, including automotive, industrial, and consumer electronics.
The working principle of the M27C256B-12B1 is based on a Flash EEPROM cell array, or Flash Memory Array. The Flash Array is composed of an array of interconnected cells that can store both programmable code and data. When the cell is written with data, the bit values of the data are stored in the Flash Array and the status of the data is tracked via the 3-bit status bus. To reduce the time needed to write to the Flash Array, each cell also contains a control bit which is set upon write completion.
Once data is written to the Flash Array, it can only be modified by erasing the entire array. To do this, the Flash Array is provided with a special erase feature known as Flash Erase which can be executed at any time without having to power down or reset the device. This ensures a very high reliability and longevity of memories.
In summary, the M27C256B-12B1 is an ideal choice for applications that require high-density, high-reliability, and low-cost memory. The device is designed with a wide range of features, making it well suited for a variety of applications, including automotive, industrial, and consumer electronics. The device also has a high-speed access time and a large capacity, making it suitable for data storage requirements such as data warehousing and game systems. Finally, the Flash Array provides high reliability and longevity, ensuring that memory stored in the device is safe and secure.
The specific data is subject to PDF, and the above content is for reference
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