M27C256B-12F6 Allicdata Electronics
Allicdata Part #:

497-1647-5-ND

Manufacturer Part#:

M27C256B-12F6

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: STMicroelectronics
Short Description: IC EPROM 256K PARALLEL 28CDIP
More Detail: EPROM - UV Memory IC 256Kb (32K x 8) Parallel 120...
DataSheet: M27C256B-12F6 datasheetM27C256B-12F6 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tube 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - UV
Memory Size: 256Kb (32K x 8)
Write Cycle Time - Word, Page: --
Access Time: 120ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm) Window
Supplier Device Package: 28-CDIP Frit Seal with Window
Base Part Number: M27C256B
Description

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M27C256B-12F6, also known as 27C256, is a high-density CMOS electrically-erasable and programmable read only memory (EEPROM), designed for high-density applications. It is manufactured in a wide variety of package styles including plastic dual-in-line packages, plastic small outline packages, and chip carrier packages. As a memory product, it can be used in many applications such as digital signal processing, communication systems, memory systems, data acquisition systems, embedded control systems, and internet of things applications.

Application Field of M27C256B-12F6

M27C256B-12F6 offers a very cost-effective, low power alternative to other EEPROMs, making it a popular choice for applications that require low cost and high density. These include data acquisition systems, communication systems, memory systems, embedded control systems and internet of things applications. It is suitable for applications that require high write speeds and low power consumption, such as handheld devices, toys, industrial controllers and automotive systems.

M27C256B-12F6 only requires very low power to operate, so it is well suited for use in battery-aquipped systems. The low power requirements also reduce heat dissipation and allow the device to be used in tight spaces. Furthermore, it is highly reliable, fast and accurate so it is ideal for high-speed data acquisition and signal processing.

Working Principle of M27C256B-12F6 Memory

M27C256B-12F6 is a type of nonvolatile memory which stores data using serially linked capacitors and resistors. It operates on a 3-state logic principle, where three logic levels can be achieved depending on the amount of charge stored in the internal memory cell.

When the device is in the ‘writing’ state, a charge is applied through an externally generated voltage. This charges the internal memory cell, which stays that way until a discharge or reset voltage is applied. When the device is in the ‘reading’ state, the charge on the internal memory cell affects the output voltage, which can be read off as a binary data signal.

M27C256B-12F6 also features an on-chip program-verify algorithm and fuse correlation circuit, allowing the user to verify the write data and check the correctness of the programmed data. It also has an on-chip protect feature to protect the user from unintended write operations.

In addition, M27C256B-12F6 is designed to be fully compatible with the JEDEC standard. Its architecture and registers are designed to be compatible with the current and future requirements of the JEDEC standard, allowing it to work seamlessly with other memory devices.

Conclusion

M27C256B-12F6 is a highly reliable and efficient electrically-erasable and programmable read only memory (EEPROM) which is well suited for a wide range of applications including data acquisition systems, communication systems, memory systems, embedded control systems and internet of things applications. It operates on a 3-state logic principle and features an on-chip program-verify algorithm and fuse correlation circuit for enhanced reliability.

The specific data is subject to PDF, and the above content is for reference

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