M27C4001-10B1

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M27C4001-10B1, a family of 4-Megabit CMOS EPROMs, are designed to replace higher density Flash memories in a variety of applications. Its high-speed, low operating current and power are suitable for battery-powered and other low voltage systems. The device weakly β-programmed (Self-timed, which eliminates the need for an external programming voltage supply) and accommodates full 4096 bytes erase/write operations. The device also utilizes advanced 2 K-byte sectors, allowing partial array- and block erase/write operations.

Application Field:

The M27C4001-10B1 family is suited for a variety of applications:

• Portable battery-powered devices
• Data retention up to 15 years
• Security applications
• non-volatile storage of downloaded firmware
• Personal communication services
• Medical information devices
• measurement systems

Working Principle:

The M27C4001-10B1 utilizes a 4-Megabit (512K-byte) array of E2 cells. It is organized as a 2K-byte sector array. Each sector is made up of 64 x 32 byte pages. Data is programmed either byte or word wide and erased in a 4096 bytes block.

The programming operations are Self-timed (also known as β-programming) code injection and erase operations. Programming is done in block mode as in the case of Flash memories. It can also be done in page mode for address ranges in the page. The internal timing of the device is automatically set for optimum program and erase operations.

The M27C4001-10B1 features an on-chip Error Detection Code (EDC) with 8-bit ECC word. The EDC helps to identify bit levels that are unreliable due to charge leakage from the floating gate structure. The EDC is determined in the programming/erasing operations for general reliability and endurance.

The M27C4001-10B1 has an 8 mA max standby current consumption. This is a quite low consumption compared to even the advanced low voltage Flash memories. This helps to eliminate heat dissipation problems at the PCB design level.

The M27C4001-10B1 is designed with a four different -Vcc options. This is done to guarantee data integrity compared to standard Flash memories. In

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