Allicdata Part #: | 497-1708-2-ND |
Manufacturer Part#: |
M29F400BB70N6T TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 4M PARALLEL 48TSOP |
More Detail: | FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Pa... |
DataSheet: | M29F400BB70N6T TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 4Mb (512K x 8, 256K x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 4.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 48-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 48-TSOP |
Base Part Number: | M29F400 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The M29F400BB70N6T TR is a type of memory designed for a variety of applications, ranging from embedded systems and microcontrollers to general-purpose computers. It is a 4 megabyte (4 MB) Flash memory device, with an asynchronous interface. It offers an industry-standard 90-pin package, making it easy to integrate into existing systems. The M29F400BB70N6T TR is also supported by a range of data bus protocols, allowing easy communication between computer systems.
The M29F400BB70N6T TR is a non-volatile storage device, meaning that it can retain data even when power is removed. This makes it an ideal choice for applications where power is unreliable or intermittent. The memory is also designed to operate over a wide temperature range, making it suitable for use in harsh environments. It is also equipped with error correction features and built-in Error Correction Code (ECC) to ensure reliable data transfers.
The M29F400BB70N6T TR uses a three-transistor (3T) non-volatile memory cell. Each cell consists of two transistors and one capacitor. This configuration allows information to be stored in the memory cell even when there is no power applied. When power is applied, the charge stored in the capacitor is read as either a 1 or a 0, resulting in the stored data being read or written.
The M29F400BB70N6T TR also includes built-in buffering and packaging technology, providing high-performance data transfers while minimizing power consumption. In addition, the memory features an array of programmable features, such as programmable block sizes and an address latch, allowing for the rapid execution of multiple read and write operations. The memory is also equipped with Error Correction Code (ECC), providing reliable error detection and correction. All of these features make the M29F400BB70N6T TR an ideal choice for a wide range of applications.
The M29F400BB70N6T TR is well-suited for applications requiring fast, reliable data storage. It is ideal for embedded systems and microcontrollers, providing access to reliable data storage in a variety of system environments. It is also suitable for general-purpose computers and networking systems, allowing reliable data storage in a variety of conditions. The memory can also be used in applications requiring high levels of data security, such as data encryption and authentication.
In addition to its applications, the M29F400BB70N6T TR also presents a unique opportunity to expand its functionality. With a range of open source tools and libraries, developers can customize their M29F400BB70N6T TR setup to meet the specific requirements of their project. Through its programmable features, developers can create a custom memory system that is specifically tailored to their applications.
The specific data is subject to PDF, and the above content is for reference
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