| Allicdata Part #: | M29F800FT55M3F2TR-ND |
| Manufacturer Part#: |
M29F800FT55M3F2 TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 8M PARALLEL 44SO |
| More Detail: | FLASH - NOR Memory IC 8Mb (1M x 8, 512K x 16) Para... |
| DataSheet: | M29F800FT55M3F2 TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 8Mb (1M x 8, 512K x 16) |
| Write Cycle Time - Word, Page: | 55ns |
| Access Time: | 55ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | -40°C ~ 125°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 44-SOIC (0.496", 12.60mm Width) |
| Supplier Device Package: | 44-SO |
| Base Part Number: | M29F800 |
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M29F800FT55M3F2 is a type of Memory product that details all its application field and working principle, making it an incredibly useful tool for all types of applications. The M29F800FT55M3F2 Memory is a comprehensive 8-bit, 16-bit or 32-bit Static Random Access Memory (SRAM) that boasts a modern, low power architecture and provides excellent performance in terms of cost and size. In this article, we\'ll discuss the application field and working principle of the M29F800FT55M3F2 Memory.
The application field of the M29F800FT55M3F2 Memory is quite broad. It is mainly used in systems and embedded applications that require ample amount of storage capacity, such as in Automotive, Military, Industrial, and Medical applications. In addition, this Memory product is also suitable for applications that need a cost-effective SRAM solution that is able to support multiple memory maps and speeds, such as Personal Computer (PC) hardware, Network appliances, and Audio/Video systems. The Memory is also found to be good for space constrained applications, as it offers a smaller form factor than usual SRAMs.
The working principle of the M29F800FT55M3F2 Memory is quite simple. It utilizes a static RAM architecture that uses transistors and capacitors to store each bit of data information. When operated, the SRAM will decode the address and data lines to read and write data bits. The transistor and capacitor used in the design ensure fast data access as the memory can maintain its data integrity even after the power is shut off. The memory also features support for multiple device access protocols and a fast write-read cycle time. This allows users to access large amounts of data very quickly in multiple applications.
The M29F800FT55M3F2 Memory also includes a sophisticated error correcting code (ECC) feature in order to provide robust data integrity and reliability. The ECC feature reduces the probability of errors in data transfers, as it allows for error detection and correction without the need for additional circuitry. It also ensures secure data transmission, as data bits that may become corrupt due to external factors can be identified and fixed before it is transferred.
In conclusion, the M29F800FT55M3F2 Memory is a comprehensive, low-power and high performance Static Random Access Memory product suitable for a wide range of applications. Its modern architecture and ECC feature ensure fast, error-free data transfers, as well as reliability and secure data transmission. This makes it a great choice for professionals and novices alike.
The specific data is subject to PDF, and the above content is for reference
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M29F800FT55M3F2 TR Datasheet/PDF