M29F160FB5AN6E2

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M29F160FB5AN6E2 is a kind of Memory that is a combination of non-volatile Flash-EEPROM and a controller IC.It is mainly used in industrial, consumer, medical and other electronic fields. The memory has the characteristics of low cost, low power consumption, fast speed and high density. In addition, it has good performance in the aspects of anti-interference and reliability.

Application field

M29F160FB5AN6E2 can be used in industrial, consumer, medical and other electronic fields. It can be used in a variety of electronic products, such as game consoles, portable electronic devices, wearable devices, cameras, printers, computers, automotive systems, and industrial applications. In particular, it is widely used in data storage, data archiving, and other tasks that require non-volatile memory.

Working principle

M29F160FB5AN6E2 is composed of an EEPROM array, a controller and other peripheral circuit. Each cell is composed of N-channel MOSFETs which are arranged in a strap structure. During its data writing and erasing process, the tunnel current is applied to the aligned nitride tunnel oxide layers, forming a small hole in the nitride tunnel oxide layers. This can facilitate the electron movement in the MOSFETs. In order to write the data, a voltage is applied between the source and drain of the MOSFETs thus an electric current is able to pass through the two terminals. When the memory needs to be erased, the process is the opposite of writing. A tunneling electric current is generated between the drain and source after the two terminals are subjected to a high voltage. This high voltage electric current will inject the electrons from the source end towards the drain end, thus making the memory cells in the erased state.

Conclusion

M29F160FB5AN6E2 is a kind of Memory that is a combination of non-volatile Flash-EEPROM and a controller IC. It has the characteristics of low cost, low power consumption, fast speed and high density, and it has good performance in the aspects of anti-interference and reliability. M29F160FB5AN6E2 can be used in a variety of fields and applications, such as data storage, data archiving and other tasks that require non-volatile memory. Its working principle is that data is written and erased by applying a tunnel electric current to the nitride tunnel oxide layers. Through the above, it can be seen that M29F160FB5AN6E2 has excellent performance in data storage and anti-interference, and its application field is also very wide, making it widely used in various industrial, consumer, medical and other electronic fields.

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