M29F160FT5AN6E2 Allicdata Electronics
Allicdata Part #:

M29F160FT5AN6E2-ND

Manufacturer Part#:

M29F160FT5AN6E2

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 16M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 16Mb (2M x 8, 1M x 16) Paral...
DataSheet: M29F160FT5AN6E2 datasheetM29F160FT5AN6E2 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8, 1M x 16)
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Memory Interface: Parallel
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: M29F160
Description

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The M29F160FT is a high-performance, multi-chips package device from Macronix, a leading innovator of Non-Volatile Memory (NVM) products. This 1.8V device is intended for use in electronic systems that require large-capacity NVM storage for applications such as data logging and storage, as well as code storage for graphical user interface (GUI), touch screen, and graphic display support.

The device is manufactured with Macronix’s patented Continuous Array Technology to produce an advanced, 16Mb device with high performance, low power consumption, high stability, and excellent quality assurance characteristics. The device is offered in a 5x6mm 176-pin, plastic TBOP and TSTP package. These packaging options allow it to be used in a variety of applications, including laptop, desktop, and embedded systems.

The M29F160FT includes 8K-bytes of SRAM, over 5MB/s of speed, and utilizes Macronix’s patented SF2 Flash technology for reliable storage of data and code. The 5AN6E2 enables firmware protection from accidental data corruption as well as over-write protection against unintentional code and data modifications.

The M29F160FT is suitable for a variety of applications that require long-term non-volatile storage in which durability and data retention are critical. It is especially beneficial in embedded systems where high performance, low power consumption, and small size are essential. The device can be used in medical, automotive, printer and many other applications.

The working principle of the M29F160FT is based on the continuous array technology. This technology has been specifically developed to produce reliable, high-performance NVM that can retain data for long periods of time. The device uses two components, the Memory Cell and the Row Decoder circuit. The Memory Cell is designed to store data within a specific array, while the Row Decoder circuit controls the location and access of the data stored within the cell. The device is also equipped with additional functions such as input/output, voltage control, write protect, page size control, and other features.

The M29F160FT is designed to provide reliable, long-term storage of data and code. It features high-endurance memory cells that retain data for extended periods of time, low power consumption for reduced energy costs, and enhanced protection features such as write protect and page size control that prevent accidental data corruption. These features make the device an ideal choice for embedded applications where long-term, reliable data storage is essential.

The specific data is subject to PDF, and the above content is for reference

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