M29F160FB55N3E2

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M29F160FB55N3E2 is a high-density Flash memory which is produced by STMicroelectronics. It is a 4-megabit high bandwidth non-volatile Flash memory and is designed to provide embedded design engineers with a wide range of features, thereby satisfying high end and cost sensitive applications.

The M29F160FB55N3E2 memory contains 16 multiplexed address/data lines allowing a fast access of each memory location. It is designed to be easily accessed via a microcontroller or system-on-chip (SoC) through a standard 16-bit or 8-bit bus. Its access speed is classified into two grades - 133 ns and 65 ns, at industrial clock rates of 25 MHz and 50 MHz respectively. The memory can also be operated in low power modes such as a byte-oriented Slow Read at 45 ns.

The M29F160FB55N3E2 is ideal for systems requiring a large amount of non-volatile data storage, such as consumer electronic products and automotive applications. This memory is particularly suited for high reliability applications, as it features a data retention of at least 20 years at temperatures up to 125°C. In addition, the memory supports a maximum programming voltage of 12.7V, which is a feature unusual for Flash memories.

The M29F160FB55N3E2 works by exploiting the storage property of a specially designed silicon device. It is a type of semiconductor memory, where data can be stored in a non-volatile form, meaning that it is able to retain stored data even if power is cut off. The data is stored in the form of electrical charges in the silicon layers of the device.

The memory consists of a large array of cells, each of which stores either one bit (binary digit) of data or a small number of bits. Each cell has two states. When it is programmed, the cell will contain one bit of data; when it is erased, it will contain no bit of data. The user can access a single byte, word or other long sequences of bits by applying signals to the correct addresses on the chip.

The M29F160FB55N3E2 can be operated in the following four modes - Read, Byte Program, Burst Program, and Clear sectors. The Read operation is used to retrieve data from the memory. During the Byte Program operation, data can be written one byte at a time. The Burst Program operation is used to write multiple bytes into memory in one cycle, and the Clear sector operation can be used to delete large amounts of data from the memory in one go.

The M29F160FB55N3E2 is an ideal memory solution for embedded systems. Its high-density and high-speed characteristics make it suitable for applications such as automotive, industrial, and consumer electronics. Furthermore, its built-in reliability features make it suitable for use in high-reliability applications such as space exploration and medical instruments.

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