M29F200FT55N3E2

Series:	--
Packaging:	Tray
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	2Mb (256K x 8, 128K x 16)
Write Cycle Time - Word, Page:	55ns
Access Time:	55ns
Memory Interface:	Parallel
Voltage - Supply:	4.5 V ~ 5.5 V
Operating Temperature:	-40°C ~ 125°C (TA)
Mounting Type:	Surface Mount
Package / Case:	48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	48-TSOP
Base Part Number:	M29F200

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Introduction to M29F200FT55N3E2

M29F200FT55N3E2 is a type of Memory semiconductor device, integrated with Non-volatile Flash Memory from STMicroelectronics. It is a cost-effective alternative to numerous memory chips, offering a broad range of features, including low power consumption, high-density storage and low noise for applications requiring reliable and long-term storage.

Applications of the M29F200FT55N3E2

The M29F200FT55N3E2 Memory is used in a variety of applications ranging from hand-held portable devices, digital cameras, industrial control, automotive systems, networking, data logging, telecommunications and more. Due to its high capacitance and large capacity memory, it is also perfect for use in audio/visual devices, digital signal processors, and image signals processing. The M29F200FT55N3E2 is used in any system needing long-term data storage. Its robust design and versatility makes the M29F200FT55N3E2 an ideal candidate for many industrial applications.

Working Principle of the M29F200FT55N3E2

The M29F200FT55N3E2 Memory consists of a set of Non-volatile Flash Memory. The device is engineered to utilize different algorithms for addressing and storing data. This type of No-volatile Memory uses an erase cycle approach to store and retrieve data, which is known as block reorganization. The device contains a controller which interacts with the Flash Memory in order to correctly store and retrieve data. A unique identifier is assigned to each block, which helps in managing and organizing the data.

The M29F200FT55N3E2 Memory has two byte level operations namely read and write. These operations help to retrieve and store data. The device also supports multiple write-back operations. A write-back operation allows the chip to store multiple copies of the same documents without any loss in memory speed or performance. The M29F200FT55N3E2 also supports block erasure, which is helpful for managing data without having to rewrite the entire block. The device has multiple software-controlled programming and erasing methods, allowing for faster programming and erasing speed. It also has multiple power modes, allowing power to be adjusted according to the user’s needs.

Conclusion

The M29F200FT55N3E2 Memory is an efficient, reliable solution for many industrial applications. Its Non-volatile Flash Memory, multiple write-back operation, block erasure, and multiple power modes make the M29F200FT55N3E2 Memory a cost effective and fast solution. Its versatile features allow it to be used in a variety of applications such as portable devices, digital cameras, industrial control, automotive systems, networking, data logging, and telecommunications.

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