| Allicdata Part #: | M29F200FB55M3E2-ND |
| Manufacturer Part#: |
M29F200FB55M3E2 |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC FLASH 2M PARALLEL 44SO |
| More Detail: | FLASH - NOR Memory IC 2Mb (256K x 8, 128K x 16) Pa... |
| DataSheet: | M29F200FB55M3E2 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Memory Type: | Non-Volatile |
| Memory Format: | FLASH |
| Technology: | FLASH - NOR |
| Memory Size: | 2Mb (256K x 8, 128K x 16) |
| Write Cycle Time - Word, Page: | 55ns |
| Access Time: | 55ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 4.5 V ~ 5.5 V |
| Operating Temperature: | -40°C ~ 125°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 44-SOIC (0.496", 12.60mm Width) |
| Supplier Device Package: | 44-SO |
| Base Part Number: | M29F200 |
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The M29F200FB55M3E2 is a type of memory and is part of a special family of NOR Flash memory, which is a type of non-volatile memory. NOR Flash memory is designed for use in digital systems, such as computers, mobile phones, and digital cameras. It is an ideal choice for applications requiring high speed and large capacities of up to 200 megabits. This type of memory is capable of reading and writing data quickly, allowing it to serve as a replacement for other types of memory, such as RAM and ROM, which it has replaced in many devices.
The M29F200FB55M3E2 memory family can be found in a wide variety of applications and industries. One of the most common uses for this type of memory is in industrial automation systems. These systems often require data storage and retrieval capabilities in order to maintain peak performance. Because it is non-volatile, it can hold data even when the system is powered down, making it ideal for this type of system.
The M29F200FB55M3E2 is also frequently used in consumer electronics, such as digital cameras and mobile phones. These devices require reliable and fast data storage capabilities, which the M29F200FB55M3E2 memory family provides. Additionally, the memory is often used in embedded applications, such as in microcontrollers, which make use of the small form factor and high speed of the memory.
The M29F200FB55M3E2 memory works on a basic principle of "storing" digital information in the form of electrical charges. The memory is divided into cells, with each cell capable of storing one bit of data. The electrical charges are used to determine the logic or status of the stored bit. Data stored within the memory is non-volatile and can be retrieved even when the power is removed from the system.
To write new data to the memory, an electric field is generated that causes the electrons in the memory cells to redistribute between the cells. By doing so, the charge level of the cell is changed, resulting in the new data being written to the memory. When reading the data from the memory, the voltages in the memory cells are measured to determine the state of the stored data.
The M29F200FB55M3E2 memory is a common choice for industrial, consumer, and embedded applications due to its star-rated performance and small form factor. Its ability to store data even when the power is removed makes it an ideal choice for devices with strict power requirements. Additionally, its high speed and large storage capacity makes it a viable option for digital applications that require a reliable, large-scale data storage device.
The specific data is subject to PDF, and the above content is for reference
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M29F200FB55M3E2 Datasheet/PDF