
Allicdata Part #: | M29W010B70N6E-ND |
Manufacturer Part#: |
M29W010B70N6E |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 1M PARALLEL 32TSOP |
More Detail: | FLASH - NOR Memory IC 1Mb (128K x 8) Parallel 70n... |
DataSheet: | ![]() |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tray |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 1Mb (128K x 8) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 32-TFSOP (0.724", 18.40mm Width) |
Supplier Device Package: | 32-TSOP (8x20) |
Base Part Number: | M29W010 |
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The M29W010B70N6E is a state-of-the-art memory device, with superior performance and reliability. This device is a high performance static random-access memory (SRAM) comprised of an organized array of high-density cells. The device’s major components are a single 2K x 16 array of synchronous SRAM cells, organized in 4K words with a 70nS maximum access time. It features a broad operating voltage range of 2.7V to 3.6V and provides a high-speed data path. Furthermore, the device also provides for parity checking for single-bit data integrity, allowing for fast detection of any single-bit errors.
The M29W010B70N6E is intended for applications that require high-density non-volatile memory. It is particularly well-suited for data storage in military and aerospace systems, industrial data logging and embedded systems. The device has a variety of application fields, including program and data storage in embedded systems, audio and video codecs, industrial data logging, medical and automotive systems, and military and aerospace systems.
The working principle of the M29W010B70N6E is based on a static random access memory (SRAM) technology. It consists of a single 2K x 16 array of synchronous SRAM cells, organized in 4K words with a maximum access time of 70 nsec. The device provides for fast access times and low power consumption, making it ideal for high speed applications. The memory can be written and read without the need for external refresh, allowing for flexible and efficient operation.
The M29W010B70N6E features parity checking for single-bit data integrity, allowing for fast detection of any single-bit errors. Additionally, the device is endowed with power fail protection, and can be used with 3.3V, 3.0V, 2.8V, and 2.5V supply voltages. These features make the device more reliable than other SRAMs, making it an ideal solution for mission-critical and safety-critical applications.
In short, the M29W010B70N6E is a high-performance static random access memory (SRAM) device. It is suitable for a variety of applications including embedded systems, audio and video codecs, industrial data logging, medical and automotive systems, and military and aerospace systems. It provides a high speed data path and superior performance with low power consumption. The device also boasts parity checking for single-bit data integrity, making it suitable for mission-critical and safety-critical applications.
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M29W256GL70ZA6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 64... |
M29W800FB70ZA3SE | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 48TF... |
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M29W128GSL70N6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 56... |
M29W160EB70ZS6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 64F... |
M29W256GSL70ZS6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 64... |
M29W320DT90N6 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 48T... |
M29W256GH7AZS6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 64... |
M29W400DT70ZE6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 48TF... |
M29W400DB45ZE6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 48TF... |
M29W160EB80ZA3SE TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 48T... |
M29W160EB70N1 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 48T... |
M29W400FT55N3E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 48TS... |
M29W200BB70N6 | Micron Techn... | -- | 1000 | IC FLASH 2M PARALLEL 48TS... |
M29W640GB70ZS6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 64F... |
M29W640GL70NA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 48T... |
M29W320EB70ZS6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 64F... |
M29W640GB6AZA6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 48T... |
M29W640GT70ZS6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 64F... |
M29W128GH7AZS6E | Micron Techn... | -- | 1000 | IC FLASH 128M PARALLEL 64... |
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M29W800DB45ZE6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 48TF... |
M29W256GL70ZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 64... |
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