M29W160EB80ZA3SE TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

M29W160EB80ZA3SE TR is a type of memory, specifically a type of Flash memory, specifically a type of NOR Flash memory. In NOR Flash memory, unlike other types of Flash memory, the cells are arranged in a grid-like pattern with each cell connected to a common bit line and a common word line. The cells are divided into blocks, with each block containing a group of cells that can be programmed and erased together. NOR Flash memory is the most affordable type of Flash memory, and is widely used in applications that require high capacity non-volatile memory.

The M29W160EB80ZA3SE TR is a type of NOR Flash memory that features a dense, 2 megabit cell array divided into 8 16K blocks. It has a 120 nanosecond random access time, which makes it suitable for a wide range of applications. It also has a low power standby mode of less than 5 mW, and can operate over a wide supply voltage ranging from 1.8 to 3.6 volts. In addition, this type of Flash memory has a fast write enabled structure, allowing bursts of up to 32 words to be written per cycle.

The memory is designed for use in applications that require data retention and recognition over a long period of time. It is a versatile memory and has been used in a variety of applications, from cellular phones and MP3 players to automotive electronics and medical equipment. The most common application of the M29W160EB80ZA3SE TR is in data and code storage, such as programming the firmware of computer devices. It is also used to store non-volatile user data, such as user preferences and downloaded content.

In terms of its working principle, the M29W160EB80ZA3SE TR uses a "floating gate" structure to store data. Floating gates are tiny insulated islands of semiconductor material that are separated from the main circuit by a thin oxide layer. When a voltage is applied across the floating gate, electrons are attracted to the gate, creating a charge that is stored in the cell. This charge can remain stored in the cell for an extended period of time despite the absence of an applied voltage.

Data can be written and erased from the M29W160EB80ZA3SE TR in a number of ways, depending on the type of application. Data can be written to the memory in "page" or "block" mode, which allows data to be written in bursts. Erasing data can be done in a single "bulk" erase operation or in "sector" erase operations, which are more granular. In addition, the M29W160EB80ZA3SE TR has two additional protection bits that can be used to protect data from accidental erasure or other malicious activities.

The M29W160EB80ZA3SE TR is a versatile NOR Flash memory with a wide range of applications. Its low power, wide operating voltage range, and fast write enabled structure make it a suitable memory for a variety of applications, from automotive electronics to medical equipment. Its floating gate structure and various data storage and erasing methods make it a suitable choice for a range of data and code storage applications.

The specific data is subject to PDF, and the above content is for reference