M29W256GL70ZA6E Allicdata Electronics
Allicdata Part #:

M29W256GL70ZA6E-ND

Manufacturer Part#:

M29W256GL70ZA6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 256M PARALLEL 64TBGA
More Detail: FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa...
DataSheet: M29W256GL70ZA6E datasheetM29W256GL70ZA6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (32M x 8, 16M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-TBGA
Supplier Device Package: 64-TBGA (10x13)
Base Part Number: M29W256
Description

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Memory - M29W256GL70ZA6E Application Field and Working Principle

M29W256GL70ZA6E is a high-end product developed by STMicroelectronics. It can be used in many applications and fields. It is mainly used in automotive electronics, industrial automation, medical and military demanding applications, and communication systems. In these application fields, it can help increase efficiency and performance.

Working Principle

The M29W256GL70ZA6E is a Flash memory that is integrated with a controller circuit. The controller acts as a bridge between the memory and the programming device, and also acts as an interface between the memory and the processor. The design of the device is based on non-volatile floating gate technology, and can store up to 256 Mb of data with a >200MHz performance. The device is designed to be used in various applications and fields, including medical and military demanding applications.

The operating principle of the device is based on the principle of electrons being trapped in the floating gate. This property makes it possible for the device to store information for a long time, even when the power is lost.

The program process is as follows: First, the user needs to select the program to be written to the memory. The program is then written to the memory cells through the controller. The program is then stored in the memory cells and is ready to read and write. When needed, the program can be read from the memory cells and used by the processor.

Advantages

The M29W256GL70ZA6E has many advantages over traditional memory designs. One of these advantages is its high speed. The device is capable of reading and writing data at speeds upto 200 MHz, making it ideal for applications requiring high speed data transfer. The device\'s wide voltage range of 1.65V to 3.6V makes it suitable for use in a variety of applications requiring different voltages. Another advantage is its low power consumption, making it ideal for battery-powered applications. Finally, the device also has a low cost, making it an attractive choice for applications requiring low cost storage.

Conclusion

The M29W256GL70ZA6E is a powerful and reliable memory device designed to meet the requirements of various applications and fields. Its combination of high speed and low power consumption makes it ideal for various applications requiring rapid data transfer. Its wide voltage range and low cost also makes it an attractive choice for applications requiring inexpensive storage.

The specific data is subject to PDF, and the above content is for reference

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