M29W640GB90NA6E Allicdata Electronics
Allicdata Part #:

M29W640GB90NA6E-ND

Manufacturer Part#:

M29W640GB90NA6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 64M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 64Mb (8M x 8, 4M x 16) Paral...
DataSheet: M29W640GB90NA6E datasheetM29W640GB90NA6E Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: M29W640
Description

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M29W640GB90NA6E is a high-performance 64MBit, 3.3V, 90ns, 8-bit, width Flash memory. It is designed as an improved alternative to parallel NOR Flash by featuring greater cost efficiency and increased flexibility. The M29W640GB90NA6E has an array of advanced features, and is ideal for a wide range of uses.

Application Field

The M29W640GB90NA6E is well-suited for a wide range of applications such as industrial programming of Field Programmable Gate Arrays (FPGAs), firmware storage for ASICs, powering vehicles, interactive gaming solutions, embedded control, automotive networking, wireless transceivers and remote wireless control systems. Its broad range of features makes it ideal for these applications.

In addition, the M29W640GB90NA6E is positioned to take over from parallel NOR solutions in some embedded industrial applications, while benefiting from advanced features such as:

  • Maximum reliability – multiple levels of ECC, advanced error correction and built-in redundancy
  • Fast data transfer rates – parallel operation and sector erase capability
  • High performance operation – low voltage operation and low power consumption in both write and read cycles
  • Small footprint – fewer pins, reduced board real-estate needs, reducing overall manufacturing costs
  • Flexible programming - programmable security locks, Erase & Program functionality, multiple I/O modes

Working Principle

The M29W640GB90NA6E operates in a single bit line, multi-level cell, serial NOR Flash architecture. Sequential operations are performed through in-system programming when the device is idle. It supports operations such as Erase, Program, Read, and Make Ready. The device offers 512K-word, 1M-word, 2M-word, and 4M-word densities with multiple interface modes.

To ensure optimal performance and data integrity, the M29W640GB90NA6E employs a variety of advanced technologies. These include the use of multi-layer error correction and advanced error correction algorithms, flexible programming methods, and an integrated operating system.

The M29W640GB90NA6E also employs a host of protection features to ensure its data is secure. These include sector-level ECC, write protection mechanisms, secure erase/program functions, on/off chip voltage/frequency regulators, and a number of other security measures.

The M29W640GB90NA6E is a reliable and cost-effective solution that can be integrated into a wide variety of applications. Its advanced features allow it to offer robust performance, reliability, and security for a variety of uses.

The specific data is subject to PDF, and the above content is for reference

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