M29W400DB70N6E Allicdata Electronics
Allicdata Part #:

M29W400DB70N6E-ND

Manufacturer Part#:

M29W400DB70N6E

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 4M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 4Mb (512K x 8, 256K x 16) Pa...
DataSheet: M29W400DB70N6E datasheetM29W400DB70N6E Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: M29W400
Description

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M29W400DB70N6E is a type of `memory’ and can be categorised in the same family as other memories such as RAM, ROM and SRAM.

The application of this type of memory is incredibly versatile, due to its compatibility with various devices, such as laptops, PCs and notebooks. The size of the M29W400DB70N6E is small enough to fit into a variety of equipment; however, the features and benefits remain the same.

Specifically, the M29W400DB70N6E provides a non-volatile programmable read-only memory (PROM) solution with a larger capacity than traditional PROMs. It also offers faster program/erase times compared to traditional PROM, as well as lower power consumption and the feature of single-wire programming, making it ideal for embedded applications. The device is composed of blocks of 70ns access time in a 28-pin package.

Some of the most common applications of the M29W400DB70N6E include embedded systems, Computer Automation/Traction Control/Electronics/Industrial Control, as well as Education. These applications make use of features such as the fast access time, small size and increased capacity of the device in order to meet their specific needs.

The working principle behind the M29W400DB70N6E memory is simple. It comprises four states: Read, Write, Program and Erase. When power is applied, the device will enter the ReadState, which retrieves the data stored in the memory. To Write to the memory, the user needs to first enter the WriteState, and then the appropriate data can be written to the memory. A Program State is needed to program the memory, and during this operation, the memory is typically programmed with the default data contained in the device. The Erase State is used to erase the contents of the memory, and when this is done the device will be ready to have new data written to it.

The M29W400DB70N6E memory is a versatile device which can be used in a variety of applications. It is a read-only memory solution which offers increased capacity and faster speeds than traditional PROMs, as well as lower power consumption. Thanks to its small size, the device can fit into a variety of systems and its four states (Read, Write, Program and Erase) make it a reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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