
Allicdata Part #: | M29W256GL70ZA6FTR-ND |
Manufacturer Part#: |
M29W256GL70ZA6F TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC FLASH 256M PARALLEL 64TBGA |
More Detail: | FLASH - NOR Memory IC 256Mb (32M x 8, 16M x 16) Pa... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Memory Type: | Non-Volatile |
Memory Format: | FLASH |
Technology: | FLASH - NOR |
Memory Size: | 256Mb (32M x 8, 16M x 16) |
Write Cycle Time - Word, Page: | 70ns |
Access Time: | 70ns |
Memory Interface: | Parallel |
Voltage - Supply: | 2.7 V ~ 3.6 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 64-TBGA |
Supplier Device Package: | 64-TBGA (10x13) |
Base Part Number: | M29W256 |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
M29W256GL70ZA6F TR is a type of flash memory. It belongs to the broad category of memory, which encompasses a variety of devices and materials that can store digital data. Flash memory has become an important storage device since first arriving on the market in the 1980s due to its power efficiency, durability, and low-cost. The M29W256GL70ZA6F TR is a specific type of flash memory known as NAND Flash and is commonly used in the automotive industry. Its unique features, structure, and application field can be discussed in further detail.
Features of M29W256GL70ZA6F TR
The M29W256GL70ZA6F TR is a type of NAND Flash memory. It is a non-volatile memory, meaning it does not need an outside power source to retain information. The memory offers a variety of technical advantages, including low power consumption, fast write speed, low voltage operation, and an extended temperature range.
The M29W256GL70ZA6F TR offers a 256 Mbit capacity and is constructed using BCDMOS technology. The memory features a wide voltage range, allowing for operation between 2.7 V and 3.6 V. It also offers a fast write speed of 10 ns, and its random access time of 80 ns is comparable to that of other types of flash memory.
The M29W256GL70ZA6F TR is a type of non-volatile memory, meaning it can store information with or without an outside power source. This makes it an ideal choice for applications that require reliable data storage, especially in environments where power sources can be unpredictable. Additionally, the memory can operate in temperatures between -40 °C and 125 °C, which makes it suitable for use in extreme conditions.
Structure of M29W256GL70ZA6F TR
The M29W256GL70ZA6F TR is a NAND Flash memory chip constructed using BCDMOS technology. The BCDMOS process produces excellent insulation between the M29W256GL70ZA6F TR\'s gate and its source and drain. This helps to reduce power consumption. The memory cell is further structured as a series of three transistors consisting of two CMOS (Complementary Metal Oxide Semiconductor) transistors and a long tail-floating gate transistor.
The memory cell\'s long tail transistor stores the information, while the two CMOS transistors help to control the reading and writing processes. Each memory cell includes three layers of insulation and the logic circuit is composed of more than 1000 transistors.
Application Field of M29W256GL70ZA6F TR
The M29W256GL70ZA6F TR is used in a variety of applications, including automotive technology, infection control, medical devices, and entertainment. Its low power consumption, wide voltage range, and extended temperature range make it well-suited for use in automobiles, where reliable operation is essential.
The M29W256GL70ZA6F TR is also used in infection control and medical device applications, where its non-volatile memory makes it an ideal choice for reliable and consistent data storage. Additionally, its fast write speed, low voltage operation, and extended temperature range make it a suitable choice for use in entertainment devices, such as digital cameras and MP3 players.
Working Principle of M29W256GL70ZA6F TR
The working principle of the M29W256GL70ZA6F TR is similar to that of other NAND Flash memories. The memory can be programmed, erased, and written by manipulation of the logic circuit and transistors. The write speed of the memory, which is determined by the duration of the write function, is controlled by the erase, program, and reset operations.
The memory can also be read by passing an appropriate external voltage across the input and output pins, which causes the circuits to activate and hold the stored information. This stored information can then be transferred to the computer and other external devices for further processing.
As with other types of non-volatile memory, the M29W256GL70ZA6F TR can also be programmed and erased with the help of a computer program. Such software can be used to erase portions of the memory or reprogram it with new information. This is a convenient way to speed up reprogramming operations and provide reliable storage of data over an extended period of time.
Conclusion
M29W256GL70ZA6F TR is a type of NAND Flash memory that has become popular in the automotive industry due to its low power consumption, fast write speed, low voltage operation, and extended temperature range. This type of memory is becoming increasingly important for applications such as infection control, medical devices, and entertainment systems. The memory operates on the same principle as other types of non-volatile memory, and is programmed and erased with the help of a computer program. The M29W256GL70ZA6F TR is a reliable and efficient type of memory, and its features make it an ideal choice for a variety of applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
M29W160ET70ZS6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 64F... |
M29W640GL70ZF3F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 64T... |
M29W320EB70N6E | Micron Techn... | -- | 1000 | IC FLASH 32M PARALLEL 48T... |
M29W160ET70N6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 48T... |
M29W320DT70N3F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 48T... |
M29W800DB45ZE6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 48TF... |
M29W800FT70N3E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 48TS... |
M29W256GH70ZS3F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 64... |
M29W400DB55N1 | Micron Techn... | -- | 1000 | IC FLASH 4M PARALLEL 48TS... |
M29W640GB70ZA3E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 48T... |
M29W128GL7AZS6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 64... |
M29W256GL70ZA6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 64... |
M29W800FB70ZA3SE | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 48TF... |
M29W200BB70M1 | STMicroelect... | 0.0 $ | 1000 | IC FLASH 2M PARALLEL 44SO... |
M29W640GB90NA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 48T... |
M29W320DB90N6 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 48T... |
M29W400DB45N6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 48TS... |
M29W400BT90M1T TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 44SO... |
M29W400DB70N6E | Micron Techn... | -- | 1000 | IC FLASH 4M PARALLEL 48TS... |
M29W128GSL70N6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 128M PARALLEL 56... |
M29W160EB70ZS6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 64F... |
M29W256GSL70ZS6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 64... |
M29W320DT90N6 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 48T... |
M29W256GH7AZS6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 64... |
M29W400DT70ZE6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 48TF... |
M29W400DB45ZE6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 48TF... |
M29W160EB80ZA3SE TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 48T... |
M29W160EB70N1 | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 48T... |
M29W400FT55N3E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 4M PARALLEL 48TS... |
M29W200BB70N6 | Micron Techn... | -- | 1000 | IC FLASH 2M PARALLEL 48TS... |
M29W640GB70ZS6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 64F... |
M29W640GL70NA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 48T... |
M29W320EB70ZS6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 32M PARALLEL 64F... |
M29W640GB6AZA6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 48T... |
M29W640GT70ZS6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 64F... |
M29W128GH7AZS6E | Micron Techn... | -- | 1000 | IC FLASH 128M PARALLEL 64... |
M29W064FB6AZA6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 64M PARALLEL 48T... |
M29W800DB45ZE6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 8M PARALLEL 48TF... |
M29W256GL70ZA6E | Micron Techn... | 0.0 $ | 1000 | IC FLASH 256M PARALLEL 64... |
M29W160EB70ZA6F TR | Micron Techn... | 0.0 $ | 1000 | IC FLASH 16M PARALLEL 48T... |
IC DRAM 32G 1866MHZ FBGASDRAM - Mobile L...

LPDDR3 6G DIE 192MX32Memory IC

IC DRAM 24G 1866MHZ FBGASDRAM - Mobile L...

IC SRAM 128K PARALLEL 84PLCCSRAM - Dual ...

IC SRAM 16K PARALLEL 52PLCCSRAM - Dual P...

IC SRAM 512K PARALLEL 100TQFPSRAM - Dual...
