M29W320DT70N3F TR Allicdata Electronics
Allicdata Part #:

M29W320DT70N3FTR-ND

Manufacturer Part#:

M29W320DT70N3F TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 32M PARALLEL 48TSOP
More Detail: FLASH - NOR Memory IC 32Mb (4M x 8, 2M x 16) Paral...
DataSheet: M29W320DT70N3F TR datasheetM29W320DT70N3F TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP
Base Part Number: M29W320
Description

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The M29W320DT70N3F TR memory is a high-performance NOR Flash memory. It is commonly used in embedded applications and a variety of other systems. It is built with a flexible architecture that makes it ideal for a wide range of applications. In order to understand the features and applications of the M29W320DT70N3F TR memory, it is important to know its main components and working principles.

The M29W320DT70N3F is a high-speed NOR-Flash synchronous burst architecture memory. It consists of four basic components: a NOR Flash memory array, control logic and peripheral circuits, an input/output (I/O) port and a data cache. The NOR Flash memory array is the core of the memory, and it stores the data bits. Control logic and peripheral circuits are responsible for controlling the operation of the memory. The I/O port provides an interface for communicating with external devices. The data cache is a special block of memory that is used to speed up access to the NOR Flash. It temporarily stores data bits accessed from the NOR Flash memory array.

In terms of working principle, the M29W320DT70N3F utilizes a synchronous burst architecture to maximize the performance of the memory. This means that the data is transferred in bursts instead of being transferred serially, which significantly reduces the latency of the memory. In order to optimize the performance of the memory, the output signals are synchronized with the system clock. This allows the memory to run at its highest performance level.

The M29W320DT70N3F TR memory is widely used in embedded applications as well as telecommunications and networking. Its high-speed NOR-Flash synchronous burst architecture and optimized performance makes it ideal for these applications. Its flexibility and scalability also allow it to be used in a variety of systems. Examples of applications include programs requiring high operational speed, system security, and messaging, among others.

In conclusion, the M29W320DT70N3F TR memory is a high-performance NOR-Flash synchronous burst architecture memory. It is often used in embedded applications and other systems. Its high-speed data transfer rate and flexible architecture makes it suitable for a variety of applications. Applications that require high operational speed and system security are best suited for the M29W320DT70N3F TR memory.

The specific data is subject to PDF, and the above content is for reference

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