M29W400FT55N3E

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The M29W400FT55N3E is a category of integrated circuit memory, more specifically, a type of flash type memory. It is primarily used in applications that require low-power consumption while providing reliable read/write and erase functions. Specifically, the M29W400FT55N3E flash memory is designed for consumer, industrial and automotive applications including automotive body controllers, industrial automation, consumer products and consumer electronics.

The M29W400FT55N3E is a 4Mbit, 3.3V CMOS Multi-Purpose Flash (MPF) memory device that provides low power consumption and reliable read and write cycles. The memory device is composed of two 1M words (1M bytes) of Flash memory, one 256-byte configuration/parameter area, and a 27-bits selectable boot block. The Boot Block enables the execution of code directly from the memory device, while the Redundant Array of Independent or Inexpensive Disks (RAID) configuration/parameter area allows for the storage of device configuration/parameter information.

The M29W400FT55N3E Flash memory includes two non-volatile, read/write and erase processes. The Read process takes data from the memory array and outputs it in parallel form to an external host device. The Write process initiates write cycles to the memory array, while the Erase process erases previously written data from the memory array. Both the write and erase cycles are page write and block erase operations.

The M29W400FT55N3E Flash memory also offers several features including: Access Time of 55ns, High Speed Serial Peripheral Interface (SPI) Mode, Advanced Power Management Features, Boot Block Programming, and Enhanced Hardware Data Protection. The Access Time of 55ns allows the memory device to read data quickly and efficiently. The High Speed SPI Mode provides a fast transfer rate of up to 25MHz, allowing for flexible and efficient data transfer. The Advanced Power Management Features provide low power write and read operations, while the Boot Block Programming allows for the execution of code directly from the memory device. Finally, the Enhanced Hardware Data Protection helps protect data against corruption due to power failure.

In addition to the features mentioned above, the M29W400FT55N3E Flash memory also incorporates a number of security features, including: Static Password Protection, Unlocking ROM Lock Bits, and EEPROM Voltage Surge Protection. Static Password Protection enables the user to set a password that must be entered before any data can be written or read from the memory device. The Unlocking ROM Lock Bits feature allows for the security of the memory against any unauthorized attempts at tampering with the data. Finally, the EEPROM Voltage Surge Protection helps protect against erroneous writes due to voltage surges.

In summary, the M29W400FT55N3E Flash memory is an integrated circuit memory that provides reliable read/write and erase functions. It is designed for use in various automotive, industrial and consumer applications, and offers features such as 55ns access time, a High Speed SPI Mode, Advanced Power Management Features, a Boot Block Programming and Enhanced Hardware Data Protection. Additionally, the M29W400FT55N3E incorporates security features such as Static Password Protection, Unlocking ROM Lock Bits and EEPROM Voltage Surge Protection.

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